W9412G6IH-5 Winbond Electronics, W9412G6IH-5 Datasheet - Page 33

• Manufacturer Part Number: W9412G6IH-5
• Description: IC DDR-400 SDRAM 128MB 66TSSOPII
• Manufacturer: Winbond Electronics

Specifications of W9412G6IH-5

• Format - Memory: RAM
• Memory Type: DDR SDRAM
• Memory Size: 128M (8Mx16)
• Speed: 250MHz
• Interface: Parallel
• Voltage - Supply: 2.3 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 66-TSOPII
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

10.9 System Notes:
a. Pullup slew rate is characterized under the test conditions as shown in Figure 1.
b. Pulldown slew rate is measured under the test conditions shown in Figure 2.
c. Pullup slew rate is measured between (V
d. Evaluation conditions
e. The ratio of pullup slew rate to pulldown slew rate is specified for the same temperature and
f. Verified under typical conditions for qualification purposes.
Pulldown slew rate is measured between (V
Pullup and Pulldown slew rate conditions are to be met for any pattern of data, including all outputs
switching and only one output switching.
Example: For typical slew rate, DQ0 is switching
Typical:
Minimum:
Maximum:
voltage, over the entire temperature and voltage range. For a given output, it represents the
maximum difference between pullup and pulldown drivers due to process variation.
For minimum slew rate, all DQ bits are switching worst case pattern
For maximum slew rate, only one DQ is switching from either high to low, or low to high
The remaining DQ bits remain the same as for previous state
25
70
0
o
C (T Ambient), V
o
o
C (T Ambient), V
C (T Ambient), V
Figure 1: Pullup slew rate test load
Figure 2: Pulldown slew rate test load
DDQ
DDQ
DDQ
= maximum, fast-fast process
= nominal, typical process
= minimum, slow-slow process
DDQ
DDQ
/2 - 320 mV ± 250 mV)
- 33 -
/2 + 320 mV ± 250 mV)
Publication Release Date: Sep. 16, 2009
W9412G6IH
Revision A06