W9412G6IH-5 Winbond Electronics, W9412G6IH-5 Datasheet

IC DDR-400 SDRAM 128MB 66TSSOPII

W9412G6IH-5

Manufacturer Part Number
W9412G6IH-5
Description
IC DDR-400 SDRAM 128MB 66TSSOPII
Manufacturer
Winbond Electronics
Datasheet

Specifications of W9412G6IH-5

Format - Memory
RAM
Memory Type
DDR SDRAM
Memory Size
128M (8Mx16)
Speed
250MHz
Interface
Parallel
Voltage - Supply
2.3 V ~ 2.7 V
Operating Temperature
0°C ~ 70°C
Package / Case
66-TSOPII
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
W9412G6IH-5
Manufacturer:
WINBOND/PBF
Quantity:
98
Part Number:
W9412G6IH-5
Manufacturer:
WINBOND/华邦
Quantity:
20 000
Table of Contents-
1.
2.
3.
4.
5.
6.
7.
GENERAL DESCRIPTION ......................................................................................................... 4
FEATURES ................................................................................................................................. 4
KEY PARAMETERS ................................................................................................................... 5
PIN CONFIGURATION ............................................................................................................... 6
PIN DESCRIPTION..................................................................................................................... 7
BLOCK DIAGRAM ...................................................................................................................... 8
FUNCTIONAL DESCRIPTION.................................................................................................... 9
7.1
7.2
7.3
7.4
7.5
7.6
7.7
7.8
7.9
7.10
Power Up Sequence....................................................................................................... 9
Command Function ...................................................................................................... 10
7.2.1
7.2.2
7.2.3
7.2.4
7.2.5
7.2.6
7.2.7
7.2.8
7.2.9
7.2.10
7.2.11
7.2.12
7.2.13
7.2.14
7.2.15
7.2.16
Read Operation............................................................................................................. 12
Write Operation............................................................................................................. 13
Precharge ..................................................................................................................... 13
Burst Termination.......................................................................................................... 13
Refresh Operation......................................................................................................... 13
Power Down Mode ....................................................................................................... 14
Input Clock Frequency Change during Precharge Power Down Mode........................ 14
Mode Register Operation.............................................................................................. 14
Bank Activate Command ........................................................................... 10
Bank Precharge Command........................................................................ 10
Precharge All Command............................................................................ 10
Write Command ......................................................................................... 10
Write with Auto-precharge Command........................................................ 10
Read Command ......................................................................................... 10
Read with Auto-precharge Command ....................................................... 10
Mode Register Set Command.................................................................... 11
Extended Mode Register Set Command ................................................... 11
No-Operation Command............................................................................ 11
Burst Read Stop Command ....................................................................... 11
Device Deselect Command ....................................................................... 11
Auto Refresh Command ............................................................................ 11
Self Refresh Entry Command .................................................................... 12
Self Refresh Exit Command....................................................................... 12
Data Write Enable /Disable Command ...................................................... 12
2M × 4 BANKS × 16 BITS DDR SDRAM
- 1 -
Publication Release Date: Sep. 16, 2009
W9412G6IH
Revision A06

Related parts for W9412G6IH-5

W9412G6IH-5 Summary of contents

Page 1

... Precharge ..................................................................................................................... 13 7.6 Burst Termination.......................................................................................................... 13 7.7 Refresh Operation......................................................................................................... 13 7.8 Power Down Mode ....................................................................................................... 14 7.9 Input Clock Frequency Change during Precharge Power Down Mode........................ 14 7.10 Mode Register Operation.............................................................................................. 14 2M × 4 BANKS × 16 BITS DDR SDRAM - 1 - W9412G6IH Publication Release Date: Sep. 16, 2009 Revision A06 ...

Page 2

... TIMING WAVEFORMS ............................................................................................................. 35 11.1 Command Input Timing ................................................................................................ 35 11.2 Timing of the CLK Signals ............................................................................................ 35 11.3 Read Timing (Burst Length = 4) ................................................................................... 36 11.4 Write Timing (Burst Length = 4).................................................................................... 37 11.5 DM, DATA MASK (W9412G6IH) .................................................................................. 38 11.6 Mode Register Set (MRS) Timing................................................................................. 39 W9412G6IH Publication Release Date: Sep. 16, 2009 - 2 - Revision A06 ...

Page 3

... Precharged/Active Power Down Mode Entry and Exit Timing .................................... 50 11.25 Input Clock Frequency Change during Precharge Power Down Mode Timing .......... 50 11.26 Self Refresh Entry and Exit Timing ............................................................................. 51 12. Package Specification............................................................................................................... 52 12.1 66L TSOP – 400 mil ..................................................................................................... 52 13. REVISION HISTORY ................................................................................................................ 53 W9412G6IH Publication Release Date: Sep. 16, 2009 - 3 - Revision A06 ...

Page 4

... SDRAM); organized as 2M words × 4 banks × 16 bits. W9412G6IH delivers a data bandwidth 500M words per second (-4). To fully comply with the personal computer industrial standard, W9412G6IH is sorted into the following speed grades: -4, -5, -5I, -6 and -6I. The -4 is compliant to the DDR500/CL3 and CL4 specification. The -5/-5I is compliant to the DDR400/CL3 specification (the -5I grade which is guaranteed to support -40° ...

Page 5

... Max. - Min 2.5 Max. - Min Max Min Max Min Min Max. 130 mA Max. 140 mA Max. 185 mA Max. 185 mA Max. 200 mA Max Publication Release Date: Sep. 16, 2009 - 5 - W9412G6IH -5/-5I -6/-6I 7 130 mA 120 mA 140 mA 130 mA 180 mA 170 mA 180 mA 170 mA 200 mA 190 ...

Page 6

... DQ7 NC V DDQ LDQS LDM WE CAS RAS CS NC BA0 BA1 A10/ Publication Release Date: Sep. 16, 2009 - 6 - W9412G6IH DQ15 64 V SSQ 63 DQ14 62 DQ13 61 V DDQ 60 DQ12 59 DQ11 58 V SSQ 57 DQ10 56 DQ9 55 V DDQ 54 DQ8 SSQ 51 UDQS REF UDM 47 46 CLK 45 CLK CKE ...

Page 7

... I/O Buffer improve noise. Ground for I/O Separated ground from V Buffer improve noise. (NC pin should be connected to GND or No connection No Connection floating W9412G6IH DESCRIPTION ) define the command CS , used for output buffer used for output buffer Publication Release Date: Sep. 16, 2009 Revision A06 ...

Page 8

... CELL ARRAY BANK #0 SENSE AMPLIFIER PREFETCH REGISTER DATA CONTROL CIRCUIT COLUMN DECODER CELL ARRAY BANK #2 SENSE AMPLIFIER NOTE: The cell array configuration is 4096 * 512 * W9412G6IH COLUMN DECODER CELL ARRAY BANK #1 SENSE AMPLIFIER DQ BUFFER DQ15 COLUMN DECODER CELL ARRAY BANK #3 SENSE AMPLIFIER Publication Release Date: Sep ...

Page 9

... DDQ and V TT MRS PREA AREF 2 Clock min 200 Clock min. DLL reset with A8 = High Initialization sequence after power- W9412G6IH . REF AREF MRS t RFC 2 Clock min. t RFC Disable DLL reset with A8 = Low Publication Release Date: Sep. 16, 2009 Revision A06 ANY CMD ...

Page 10

... Read with Auto-precharge Command ( RAS = “H”, CAS = ”L” ”H”, BA0, BA1 = Bank, A10 = ”H” Column Address) The Read with Auto-precharge command automatically performs the Precharge operation after the Read operation. W9412G6IH Publication Release Date: Sep. 16, 2009 - 10 - Revision A06 ...

Page 11

... The refresh addressing is generated by the internal refresh controller. This makes the address bits ”Don’t Care” during an AUTO REFRESH command. The DDR SDRAM requires AUTO RE (BL/ W9412G6IH Publication Release Date: Sep. 16, 2009 Revision A06 ...

Page 12

... Refer to the diagrams for Read operation. (maximum). REFI because time is required for the completion of any internal refresh in from the Bank Activate command, the data is read out sequentially W9412G6IH . REFI Publication Release Date: Sep. 16, 2009 Revision A06 ...

Page 13

... In Self Refresh mode, all input/output buffers are disabled, from the bank activate command. The input data is latched RCD from the bank activate command. RAS(max) . RFC Publication Release Date: Sep. 16, 2009 - 13 - W9412G6IH . Therefore, each RAS (max) Revision A06 ...

Page 14

... Burst Length field (A2 to A0) This field specifies the data length for column access using the pins and sets the Burst Length and 8 words BURST LENGTH 0 Reserved 1 2 words 0 4 words 1 8 words x Reserved Publication Release Date: Sep. 16, 2009 - 14 - W9412G6IH Revision A06 ...

Page 15

... A0) not carried from words (address bit A0, A1) Not carried from words (address bits A2, A1 and A0) Not carried from Addressing Sequence of Interleave Mode ACCESS ADDRESS - 15 - W9412G6IH BURST LENGTH BURST LENGTH 2 words 4 words 8 words Publication Release Date: Sep. 16, 2009 Revision A06 ...

Page 16

... These bits are reserved for future operations. They must be set to “0” for normal operation. A4 CAS LATENCY A11-A0 Regular MRS Cycle Extended MRS Cycle Reserved DLL Enable Disable BUFFER STRENGTH 100% Strength 60% Strength Reserved 30% Strength Publication Release Date: Sep. 16, 2009 - 16 - W9412G6IH Reserved Reserved Reserved 2.5 Reserved Revision A06 ...

Page 17

... CKEn signal is input level when commands are issued. CKEn-1 signal is input level one clock cycle before the commands are issued. 3. These are state designated by the BA0, BA1 signals. 4. LDM, UDM (W9412G6IH). 5. Power Down Mode can not entry in the burst cycle. BA0, ...

Page 18

... BST BA, CA, A10 READ/READA L BA, CA, A10 WRIT/WRITA BA, RA ACT L BA, A10 PRE/PREA X AREF/SELF L Op-Code MRS/EMRS - 18 - W9412G6IH ACTION NOP NOP ILLEGAL ILLEGAL Row activating NOP Refresh or Self refresh Mode register accessing NOP NOP Begin read: Determine AP Begin write: Determine AP ILLEGAL Precharge ILLEGAL ...

Page 19

... BA, CA, A10 READ/READA L BA, CA, A10 WRIT/WRITA H BA, RA ACT L BA, A10 PRE/PREA H X AREF/SELF L Op-Code MRS/EMRS - 19 - W9412G6IH ACTION NOTES Continue burst to end Continue burst to end ILLEGAL ILLEGAL ILLEGAL ILLEGAL ILLEGAL ILLEGAL ILLEGAL Continue burst to end Continue burst to end ILLEGAL ILLEGAL ILLEGAL ILLEGAL ...

Page 20

... X READ/WRIT X ACT/PRE/PREA X AREF/SELF/MRS/EMRS X DSL X NOP L X BST X READ/WRIT ACT/PRE/PREA/ARE X F/SELF/MRS/EMRS W9412G6IH ACTION NOTES NOP -> Row active after t WR NOP -> Row active after t WR ILLEGAL ILLEGAL ILLEGAL ILLEGAL ILLEGAL ILLEGAL ILLEGAL NOP -> Enter precharge after t WR NOP -> Enter precharge after t WR ILLEGAL ...

Page 21

... X X Enter Power down Self Refresh ILLEGAL ILLEGAL Power down Refer to Function Truth Table Enter Power down Enter Power down ILLEGAL ILLEGAL ILLEGAL Power down Refer to Function Truth Table - 21 - W9412G6IH ACTION NOTES XSNR XSNR IS Publication Release Date: Sep. 16, 2009 Revision A06 ...

Page 22

... PDEX ACT PDEX PD ROW ACTIVE Write Read Read A Write A Read A PRE PRE PRE PRE CHARGE PRE - 22 - W9412G6IH SELF REFRESH SREFX AUTO REFRESH PD POWER DOWN BST Read Read Read Read A Read A Automatic Sequence Command Sequence Publication Release Date: Sep. 16, 2009 Revision A06 ...

Page 23

... V 0. DDQ V - 0.04 V REF V + 0.15 REF -0.3 -0.3 0. 0.31 REF - 0 0.2 DDQ 0.2 DDQ +1.5V with a pulse width < W9412G6IH RATING UNIT -0 0.3 V DDQ -0 °C - °C -55 ~ 150 °C 260 ° MAX. UNIT NOTES 2.5 2.7 V 2.5 2.6 V 2.5 2 ...

Page 24

... Output Minimum Sink DC Current OL (DC ° /2, V (Peak to Peak) = 0.2V) A OUT (DC) DDQ OUT MIN. 2.0 3.0 1.5 - < OUT DDQ 100% Strength 60% Strength 30% Strength - 24 - W9412G6IH DELTA MAX. (MAX.) 4.0 0.5 5.0 0.25 5.5 0.5 1.5 - MIN. MAX. UNIT -2 2 µ µA V +0. ...

Page 25

... DQ, DM and DQS inputs changing twice per clock cycle; Address changing once per clock cycle min mA OUT . . for DQ, DQS and DM REF min min min; One Bank Active-Precharge; . min. RFC = t min W9412G6IH MAX. UNIT NOTES -4 -5/-5I -6/-6I 130 130 120 140 140 130 185 180 170 ...

Page 26

... CH -0.5 -0.5 0.9 1.1 0.9 0.4 0.6 0.4 0.4 0.4 0.4 0.4 1.75 0.35 0.35 0.35 0.35 0.2 0.2 0.2 0 Publication Release Date: Sep. 16, 2009 - 26 - W9412G6IH -6/-6I UNIT NOTES MAX. MIN. MAX 70000 42 100000 7 0.7 -0.7 0.7 16 0.6 -0.6 0.6 ...

Page 27

... SYMBOL REF (AC) V OTR Publication Release Date: Sep. 16, 2009 - 27 - W9412G6IH -6/-6I UNIT NOTES MAX. MIN. MAX. 0.25 0.6 0.4 0 1.25 0.75 1.25 0.75 19, 21-23 0.75 19, 21-23 0.8 20-23 0.8 20-23 2.2 nS 0.7 -0.7 0.7 0.7 -0 ...

Page 28

... DDQ system supply for signal termination resistors is expected to be set TT . REF and V .Transition (rise and fall) of input signals have a fixed IH min(AC) IL max(AC) contains more than one decimal place, the result is rounded CLK )}/ W9412G6IH Publication Release Date: Sep. 16, 2009 Revision A06 ...

Page 29

... These parameters guarantee device timing, but they are not necessarily tested on each device. They may be guaranteed by device design or tester correlation. (23) Slew Rate is measured between ICK ICK V V ISO(min) ISO(max) (ac) and V (ac Publication Release Date: Sep. 16, 2009 - 29 - W9412G6IH ICK ID(AC) Revision A06 ...

Page 30

... +50 0 +100 0 Δt Δ +75 0 +150 0 Δt Δ +50 0 +100 0 TYPICAL MINIMUM RANGE (V/NS) (V/NS) 1.2 ~ 2.5 0.7 1.2 ~ 2.5 0 W9412G6IH DDR333 UNIT NOTES MIN. MAX. 4.0 0.5 4.0 V/ UNIT NOTES UNIT NOTES UNIT NOTES MAXIMUM NOTES (V/NS Publication Release Date: Sep ...

Page 31

... Figure 3: Address and Control AC Overshoot and Undershoot Definition DDR500 DDR400 MIN. MAX. MIN. MAX. 0.67 1.5 0.67 DDR500 1.5 V 1.5 V 3.0 V-nS 3.0 V-nS Overshoot Time (nS W9412G6IH DDR333 NOTES MIN. MAX. 1.5 0.67 1 SPECIFICATION DDR400 DDR333 1.5 V 1.5 V 1.5 V 1.5 V 3.0 V-nS 3.6 V-nS 3 ...

Page 32

... Figure 4: DQ/DM/DQS AC Overshoot and Undershoot Definition DDR500 1.2 V 1.2 V 1.44 V-nS 1.44 V-nS Overshoot Time (nS W9412G6IH SPECIFICATION DDR400 DDR333 1.2 V 1.2 V 1.2 V 1.2 V 1.44 V-nS 2.25 V-nS 1 ...

Page 33

... Verified under typical conditions for qualification purposes 320 mV ± 250 mV) DDQ /2 + 320 mV ± 250 mV) DDQ = nominal, typical process DDQ = minimum, slow-slow process DDQ = maximum, fast-fast process DDQ Publication Release Date: Sep. 16, 2009 - 33 - W9412G6IH Revision A06 ...

Page 34

... DQ, DM, and DQS slew similarly for rising transitions. IL(AC) IH(DC) IL(DC) and t in the case where the I/O slew rate is below 0.5 V/nS. The W9412G6IH and t of 100 IH(AC) IL(AC) Publication Release Date: Sep. 16, 2009 Revision A06 IH(DC) ...

Page 35

... TIMING WAVEFORMS 11.1 Command Input Timing 11.2 Timing of the CLK Signals W9412G6IH Publication Release Date: Sep. 16, 2009 - 35 - Revision A06 ...

Page 36

... CLK CMD READ ADD Col CAS Latency = 2 Hi-Z DQS Hi-Z Output (Data) CAS Latency = 3 Hi-Z DQS Hi-Z Output (Data) Notes : The correspondence of LDQS, UDQS to DQ. (W9412G6IH) LDQS DQ0~7 UDQS DQ8~ DQSCK t DQSCK t RPRE t QH Preamble DQSQ QH DQSQ QA0 DA0 DA1 QA1 ...

Page 37

... DQSH Postamble DA0 DA1 DA2 DA3 DA1 DSS DSH DSS DSH WPST DQSL DQSH DQSH Postamble DA0 DA1 DA2 DA3 DSH DSS DSH DSS DQSL DQSH DQSH WPST Postamble DA0 DA1 DA2 DA3 W9412G6IH Publication Release Date: Sep. 16, 2009 Revision A06 ...

Page 38

... DM, DATA MASK (W9412G6IH) W9412G6IH Publication Release Date: Sep. 16, 2009 - 38 - Revision A06 ...

Page 39

... Addressing Mode CAS Latency A6 A7 Reserved "0" A8 DLL Reset "0" A9 A10 "0" Reserved A11 "0" Mode Register Set BA0 "0" or Extended Mode Register Set "0" BA1 * "Reserved" should stay "0" during MRS cycle. W9412G6IH t MRD NEXT CMD Burst Length Sequential Reserved ...

Page 40

... A8 "0" Reserved A9 "0" A10 "0" A11 "0" BA0 Mode Register Set "0" or Extended Mode BA1 "0" Register Set * "Reserved" should stay "0" during EMRS cycle. W9412G6IH t MRD NEXT CMD DLL Switch A0 Enable 0 Disable Buffer Strength 100% Strength 0 0 60% Strength 0 1 Reserved ...

Page 41

... Notes: CL=2 shown; same command operation timing with CL = 2,5 and CL=3 In this case, the internal precharge operation begin after BL/2 cycle from READA command. AP Represents the start of internal precharging. The Read with Auto-precharge command cannot be interrupted by any other command RAS READA READA READA W9412G6IH t RP ACT ACT ACT ...

Page 42

... Represents the start of internal precharging. The Read with Auto-precharge command cannot be interrupted by any other command. – (BL/2) × t RAS (min RAS READA Q0 Q1 READA READA W9412G6IH t RP ACT AP AP ACT Q3 AP ACT (min) has command. RAS Publication Release Date: Sep. 16, 2009 Revision A06 ...

Page 43

... WRITA CMD DQS BL=4 WRITA CMD DQS BL=8 WRITA CMD DQS The Write with Auto-precharge command cannot be interrupted by any other command. AP Represents the start of internal precharging. t DAL AP t DAL W9412G6IH ACT ACT t DAL AP ACT Publication Release Date: Sep. 16, 2009 Revision A06 ...

Page 44

... Read Interrupted by Read ( 11.12 Burst Read Stop ( W9412G6IH Publication Release Date: Sep. 16, 2009 - 44 - Revision A06 ...

Page 45

... Read Interrupted by Write & BST ( Burst Read cycle must be terminated by BST Command to avoid I/O conflict. 11.14 Read Interrupted by Precharge ( CLK CLK CMD READ CAS Latency = 2 DQS DQ CAS Latency = 3 DQS DQ PRE CAS Latency CAS Latency W9412G6IH Publication Release Date: Sep. 16, 2009 Revision A06 ...

Page 46

... Write Interrupted by Write ( 11.16 Write Interrupted by Read ( CLK CLK CMD WRIT DQS Data must be masked by DM READ t WTR Data masked by READ command, DQS input ignored W9412G6IH Publication Release Date: Sep. 16, 2009 Revision A06 ...

Page 47

... CLK CMD WRIT DQS 11.18 Write Interrupted by Precharge ( CLK CLK CMD WRIT DQS READ t WTR D2 D3 Data must be masked by DM PRE Data must be Data masked by PRE masked by DM command, DQS input ignored W9412G6IH ACT Publication Release Date: Sep. 16, 2009 Revision A06 ...

Page 48

... RAS(a) t RCD(b) t RAS(b) Preamble CL(a) APa tRC(b) tRC(a) ACTb READAa READAb tRAS(a) tRCD(b) tRAS(b) Preamble CL(a) Q0a Q1a APa - 48 - W9412G6IH t RRD READAb ACTa ACTb t RP(a) t RP(b) Postamble Preamble Postamble CL(b) Q0a Q1a Q0b Q1b APb tRRD ACTa ACTb tRP(a) tRP(b) Postamble ...

Page 49

... READAa/b/c/d : Read with Auto Pre.CMD of bank a/b/c/d APa/b/c/d : Auto Pre. of bank a/b/c/d 11.22 4 Bank Interleave Read Operation ( RC( RRD RRD ACTb ACTc READAa ACTd tRCD(a) t RAS(a) t RCD(b) t RAS(b) CL( W9412G6IH t RRD READAb ACTa READAc RCD(c) t RAS(c) t RCD(d) t RAS(d) Preamble Postamble Preamble CL(b) Q0a Q1a Q0b Q1b APb APa Publication Release Date: Sep ...

Page 50

... CLK CLK CMD NOP NOP CKE t RP Minmum 2 clocks required before changing frequency NOP t IS Frequency Change Occurs here Stable new clock before power down exit Publication Release Date: Sep. 16, 2009 - 50 - W9412G6IH DLL NOP NOP CMD RESET 200 clocks Revision A06 ...

Page 51

... Self Refresh Entry and Exit Timing Note: If the clock frequency is changed during self refresh mode, a DLL reset is required upon exit. W9412G6IH Publication Release Date: Sep. 16, 2009 - 51 - Revision A06 ...

Page 52

... PACKAGE SPECIFICATION 12.1 66L TSOP – 400 mil Publication Release Date: Sep. 16, 2009 - 52 - W9412G6IH Revision A06 ...

Page 53

... Add -5I and -6I industrial grade parts 25, 26, 27 Modify DDR500 -4 speed grade power supply voltage 4, 23, 28 range from 2.6V ±0.1V to 2.5V ±0.1V 16, 24, 40 Add 30% driver strength support Important Notice - 53 - W9412G6IH DESCRIPTION from 1 t WTR WPRE CK Publication Release Date: Sep. 16, 2009 Revision A06 CK ...

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