STK17TA8-RF25ITR Cypress Semiconductor Corp, STK17TA8-RF25ITR Datasheet - Page 7

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STK17TA8-RF25ITR

Manufacturer Part Number
STK17TA8-RF25ITR
Description
IC NVSRAM 1MBIT 25NS 48SSOP
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of STK17TA8-RF25ITR

Format - Memory
RAM
Memory Type
NVSRAM (Non-Volatile SRAM)
Memory Size
1M (128K x 8)
Speed
25ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-SSOP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
SRAM READ Cycles #1 and #2
Notes
NO.
3. W must be high during SRAM READ cycles.
4. Device is continuously selected with E and G both low
5. Measured ± 200mV from steady state output voltage.
6. HSB must remain high during READ and WRITE cycles.
Document #: 001-52039 Rev. *A
10
11
1
2
3
4
5
6
7
8
9
t
t
t
AVAV
AVQV
AXQX
DQ (DATA OUT)
#1
[3]
[4]
[4]
ADDRESS
t
t
t
t
t
t
t
t
t
t
t
ELQV
ELEH
AVQV
GLQV
AXQX
ELQX
EHQZ
GLQX
GHQZ
ELICCL
EHICCH
#2
Symbols
[3]
[4]
[4]
[5]
[5]
[2]
[2]
t
t
t
t
t
t
t
t
t
t
t
ACS
RC
AA
OE
OH
LZ
HZ
OLZ
OHZ
PA
PS
Alt.
Figure 5. SRAM READ Cycle #1: Address Controlled
Figure 6. SRAM READ Cycle #2: E and G Controlled
Chip Enable Access Time
Read Cycle Time
Address Access Time
Output Enable to Data Valid
Output Hold after Address Change
Address Change or Chip Enable to Output Active
Address Change or Chip Disable to Output
Inactive
Output Enable to Output Active
Output Disable to Output Inactive
Chip Enable to Power Active
Chip Disable to Power Standby
10
t
AXQX
6
5
3
8
4
1
t
2
Parameter
AVQV
3
t
AVAV
2
DATA VALID
29
[3, 4, 6]
STK17TA8-25
[3, 6]
Min
25
3
3
0
0
9
7
11
Max
25
25
12
10
10
25
STK17TA8-45
Min
45
3
3
0
0
STK17TA8
Max
45
45
20
15
15
45
Page 7 of 24
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
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