STK17TA8-RF25ITR Cypress Semiconductor Corp, STK17TA8-RF25ITR Datasheet - Page 5

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STK17TA8-RF25ITR

Manufacturer Part Number
STK17TA8-RF25ITR
Description
IC NVSRAM 1MBIT 25NS 48SSOP
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of STK17TA8-RF25ITR

Format - Memory
RAM
Memory Type
NVSRAM (Non-Volatile SRAM)
Memory Size
1M (128K x 8)
Speed
25ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-SSOP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DC Electrical Characteristics
(V
AC Test Conditions
Input Pulse Levels ....................................................0V to 3V
Input Rise and Fall Times ............................................ <5 ns
Input and Output Timing Reference Levels .................... 1.5V
Output Load..................................See
Capacitance
(T
Note
Document #: 001-52039 Rev. *A
T
V
V
NV
DATA
C
C
Symbol
2. These parameters are guaranteed but not tested.
A
CC
CAP
A
IN
OUT
CC
C
= 25°C, f = 1.0MHz)
= 2.7V-3.6V)
R
Symbol
Operating Temperature
Operating Voltage
Storage Capacitance
Nonvolatile STORE operations
Data Retention
Input Capacitance
Output Capacitance
Parameter
Figure 3. AC Output Loading for Tristate Specs
[2]
Parameter
Figure 2
(continued)
OUTPUT
OUTPUT
and
Min
200
2.7
Figure 2. AC Output Loading
17
20
0
Commercial
Figure 3
789 Ohms
789 Ohms
Max
3.6
70
57
Max
7
7
– 40
Min
200
2.7
17
20
3.0V
3.0V
Industrial
(t
577 Ohms
HZ
SCOPE AND
FIXTURE
30 pF
INCLUDING
577 Ohms
SCOPE AND
FIXTURE
5 pF
INCLUDING
, t
LZ
Max
, t
3.6
85
57
WLQZ
Units
, t
pF
pF
WHQZ
Units
Years At 55 °C
°C
μF
K
V
, t
GLQX
3.0V +20%, -10%
Between V
rated.
ΔV = 0 to 3V
ΔV = 0 to 3V
, t
GHQZ
CAP
Conditions
Notes
pin and V
STK17TA8
Page 5 of 24
SS
, 5V
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