NAND01GW3B2BZA6E NUMONYX, NAND01GW3B2BZA6E Datasheet - Page 49

• Manufacturer Part Number: NAND01GW3B2BZA6E
• Description: IC FLASH 1GBIT 63VFBGA
• Manufacturer: NUMONYX

Specifications of NAND01GW3B2BZA6E

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 1G (128M x 8)
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 63-VFBGA
• Cell Type: NAND
• Density: 1Gb
• Access Time (max): 25us
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 8b
• Operating Supply Voltage (typ): 3/3.3V
• Operating Temp Range: -40C to 85C
• Package Type: VFBGA
• Program/erase Volt (typ): 2.7 to 3.6V
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 128M
• Supply Current: 30mA
• Mounting: Surface Mount
• Pin Count: 63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Compliant

NAND01G-B2B, NAND02G-B2C
Figure 23. Read status register AC waveforms
Figure 24. Read electronic signature AC waveforms
1. Refer to
contained in byte 3 and 4.
I/O
CL
AL
CL
I/O
W
W
E
R
E
R
Table 14
for the values of the manufacturer and device codes, and to
Read Electronic
90h
Command
Signature
tCLHWH
(Data Setup time)
tELWH
tDVWH
1st Cycle
Address
tALLRL1
00h
(Read ES Access time)
70h
tRLQV
tWLWH
(Data Hold time)
tWHDX
tWHCLL
tWHEH
tDZRL
Byte1
Man.
code
tWHRL
tCLLRL
tRLQV
Device
code
tELQV
Byte2
Table 15
Byte3
00h
Status Register
and
tEHQZ
tRHQZ
Output
Table 16
see Note.1
DC and AC parameters
Byte4
for the information
ai13108
ai08667
49/61