NAND01GW3B2BZA6E NUMONYX, NAND01GW3B2BZA6E Datasheet - Page 40

• Manufacturer Part Number: NAND01GW3B2BZA6E
• Description: IC FLASH 1GBIT 63VFBGA
• Manufacturer: NUMONYX

Specifications of NAND01GW3B2BZA6E

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 1G (128M x 8)
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 63-VFBGA
• Cell Type: NAND
• Density: 1Gb
• Access Time (max): 25us
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 8b
• Operating Supply Voltage (typ): 3/3.3V
• Operating Temp Range: -40C to 85C
• Package Type: VFBGA
• Program/erase Volt (typ): 2.7 to 3.6V
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 128M
• Supply Current: 30mA
• Mounting: Surface Mount
• Pin Count: 63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Compliant

Program and erase times and endurance cycles
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Program and erase times and endurance cycles
The program and erase times and the number of program/erase cycles per block are shown
in
Table 18.
Page program time
Block erase time
Program/erase cycles per block (with ECC)
Data retention
Table
18.
Program, erase times and program erase endurance cycles
Parameters
100 000
Min
10
NAND flash
NAND01G-B2B, NAND02G-B2C
Typ
200
2
Max
700
3
cycles
years
Unit
ms
µs