NAND01GW3B2BZA6E NUMONYX, NAND01GW3B2BZA6E Datasheet - Page 27

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NAND01GW3B2BZA6E

Manufacturer Part Number
NAND01GW3B2BZA6E
Description
IC FLASH 1GBIT 63VFBGA
Manufacturer
NUMONYX
Datasheets

Specifications of NAND01GW3B2BZA6E

Format - Memory
FLASH
Memory Type
FLASH - Nand
Memory Size
1G (128M x 8)
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
63-VFBGA
Cell Type
NAND
Density
1Gb
Access Time (max)
25us
Interface Type
Parallel
Boot Type
Not Required
Address Bus
8b
Operating Supply Voltage (typ)
3/3.3V
Operating Temp Range
-40C to 85C
Package Type
VFBGA
Program/erase Volt (typ)
2.7 to 3.6V
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8b
Number Of Words
128M
Supply Current
30mA
Mounting
Surface Mount
Pin Count
63
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Speed
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Compliant

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NAND01G-B2B, NAND02G-B2C
6.4
Copy back program
The copy back program operation is used to copy the data stored in one page and
reprogram it in another page.
The copy back program operation does not require external memory and so the operation is
faster and more efficient because the reading and loading cycles are not required. The
operation is particularly useful when a portion of a block is updated and the rest of the block
needs to be copied to the newly assigned block.
If the copy back program operation fails an error is signalled in the status register. However
as the standard external ECC cannot be used with the copy back program operation bit error
due to charge loss cannot be detected. For this reason it is recommended to limit the
number of copy back program operations on the same data and or to improve the
performance of the ECC.
The copy back program operation requires four steps:
1.
2.
3.
To see the data input cycle for modifying the source page and an example of the copy back
program operation refer to
A data input cycle to modify a portion or a multiple distant portion of the source page, is
shown in
Table 11.
Table 12.
The first step reads the source page. The operation copies all 1056 words/ 2112 bytes
from the page into the data buffer. It requires:
When the device returns to the ready state (Ready/Busy High), the next bus write cycle
of the command is given with the 4 or 5 bus cycles to input the target page address
(see
for the source and target pages
Then the confirm command is issued to start the P/E/R controller.
Figure
one bus write cycle to setup the command
4 or 5 bus write cycles to input the source page address (see
one bus write cycle to issue the confirm command code
Table 6
Density
Density
Copy back program x8 addresses
Copy back program x16 addresses
2 Gbits
2 Gbits
1 Gbit
1 Gbit
12.
and
Table
Figure
7). Refer to
11.
Table 11
Same address for source and target pages
Same address for source and target pages
for the addresses that must be the same
no constraint
no constraint
A28
A27
Table 6
Device operations
and
Table
27/61
7)

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