M25PE80-VMS6TG NUMONYX, M25PE80-VMS6TG Datasheet - Page 9
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M25PE80-VMS6TG
Manufacturer Part Number
M25PE80-VMS6TG
Description
IC SRL FLASH 8MB PG ERS 3V QFN8L
Manufacturer
NUMONYX
Series
Forté™r
Datasheet
1.M25PE80-VMN6TP.pdf
(66 pages)
Specifications of M25PE80-VMS6TG
Format - Memory
FLASH
Memory Type
FLASH
Memory Size
8M (1M x 8)
Speed
75MHz
Interface
SPI, 3-Wire Serial
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-QFN
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
M25PE80-VMS6TGTR
M25PE80
2.6
2.7
2.8
Write protect (W) or top sector lock (TSL)
V
V
V
V
CC
SS
CC
SS
is the reference for the V
The write protect function is available in the T9HX process only (see
note on page
The write protect (W) input is used to freeze the size of the area of memory that is
protected against write, program and erase instructions (as specified by the values in
the BP2, BP1 and BP0 bits of the status register. See
(RDSR)
The top sector lock function is available in the T7Y process only (see
note on page
The input signal sets the device in the hardware protected mode, when top sector lock
(TSL) is connected to V
memory to become read-only (protected from write, program and erase operations).
When top sector lock (TSL) is connected to V
like the other pages of memory.
is the supply voltage.
ground
supply voltage
for a description of these bits).
6).
6).
SS
CC
, causing the top 256 pages (upper addresses) of the
supply voltage.
CC
, the top 256 pages of memory behave
Section 6.4: Read status register
Signal descriptions
Important
Important
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