NAND256W3A2BN6F STMicroelectronics, NAND256W3A2BN6F Datasheet - Page 40

• Manufacturer Part Number: NAND256W3A2BN6F
• Description: IC FLASH 256MBIT 48TSOP
• Manufacturer: STMicroelectronics

Specifications of NAND256W3A2BN6F

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 256M (32M x 8)
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -

DC and AC parameters
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Table 18.
1. Leakage currents double on stacked devices.
Symbol
I
OL
V
I
I
I
I
I
V
V
V
DD1
DD2
DD3
DD4
DD5
I
V
I
LKO
LO
OH
(RB)
LI
OL
IH
IL
Operating current
(erase and program lockout)
DC characteristics
Output High voltage level
Standby current (CMOS)
Output Low voltage level
Output Low current (RB)
Output leakage current
Standby current (TTL)
Input leakage current
V
Input High voltage
Input Low voltage
DD
Parameter
supply voltage
Sequential
Program
Erase
read
(1)
E=V
V
Test conditions
IN
t
WP = 0 V/V
WP = 0 V/V
I
RLRL
OH
I
E = V
OL
V
= 0 to V
V
IL,
OL
V
E = V
OUT
= −400 µA
DD
= 2.1 mA
I
OUT
minimum
= 0.4 V
–
–
–
–
–
DD
= 0 to
max
IH
-0.2
= 0 mA
DD
,
DD
DD
max
−0.3
Min
2.0
2.4
–
–
–
–
–
–
–
–
–
–
8
–
NAND128-A, NAND256-A
Typ
10
10
10
10
20
10
–
–
–
–
–
–
–
–
–
V
DD
Max
100
±10
±10
0.8
0.4
1.7
20
20
20
50
1
2
-
+0.3
Unit
mA
mA
mA
mA
mA
mA
µA
µA
µA
µA
V
V
V
V
V