NAND128W3A0AN6 STMicroelectronics, NAND128W3A0AN6 Datasheet - Page 35

• Manufacturer Part Number: NAND128W3A0AN6
• Description: IC FLASH 128MBIT 48TSOP
• Manufacturer: STMicroelectronics

Specifications of NAND128W3A0AN6

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 128M (16M x 8)
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -

Table 19. DC Characteristics, 3V Devices
Symbol
I
OL
V
I
I
I
I
I
V
V
V
DD1
DD2
DD3
DD4
DD5
I
V
I
LKO
LO
OH
LI
OL
(RB)
IH
IL
512Mb and 1Gb Dual Die devices
512Mb and 1Gb Dual Die devices
128Mb, 256Mb, 512Mb devices
128Mb, 256Mb, 512Mb devices
V
DD
Stand-By Current (CMOS)
Stand-By Current (CMOS)
Output High Voltage Level
Output Low Voltage Level
Operating
Output Low Current (RB)
Output Leakage Current
Stand-by Current (TTL),
Stand-by Current (TTL)
Current
Input Leakage Current
Supply Voltage (Erase and
Input High Voltage
Input Low Voltage
Program lockout)
Parameter
Sequential
Program
Erase
Read
NAND128-A, NAND256-A, NAND512-A, NAND01G-A
E=V
V
E=V
V
Test Conditions
OUT
IN
t
RLRL
I
OH
I
E=V
= 0 to V
IH
WP=0/V
OL
V
IL,
= 0 to V
OL
, WP=0V/V
= 400µA
I
= 2.1mA
OUT
minimum
DD
= 0.4V
-
-
-
-
-
-0.2,
DD
= 0 mA
DD
DD
max
max
DD
Min
2.0
2.4
0.3
8
-
-
-
-
-
-
-
-
-
-
-
Typ
10
10
10
10
20
10
-
-
-
-
-
-
-
-
-
V
DD
Max
100
±10
±10
0.8
0.4
2.5
20
20
20
50
1
2
-
+0.3
Unit
35/56
mA
mA
mA
mA
mA
mA
µA
µA
µA
µA
V
V
V
V
V