NAND01GW4B2AN6E STMicroelectronics, NAND01GW4B2AN6E Datasheet - Page 62
NAND01GW4B2AN6E
Manufacturer Part Number
NAND01GW4B2AN6E
Description
IC FLASH 1GBIT 48TSOP
Manufacturer
STMicroelectronics
Datasheet
1.NAND01GW3A0AN6E.pdf
(64 pages)
Specifications of NAND01GW4B2AN6E
Format - Memory
FLASH
Memory Type
FLASH - Nand
Memory Size
1G (64M x 16)
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Speed
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part numbering
13
62/64
Part numbering
Table 29.
Devices are shipped from the factory with the memory content bits, in valid blocks, erased to
’1’. For further information on any aspect of this device, please contact your nearest ST
Sales Office.
Example:
Device Type
NAND Flash Memory
Density
01G = 1Gb
02G = 2Gb
Operating Voltage
R = V
W = V
Bus Width
3 = x8
4 = x16
Family Identifier
B = 2112 Bytes/ 1056 Word Page
Device Options
2 = Chip Enable Don't Care Enabled
Product Version
A = First Version
B= Second Version
C= Third Version
Package
N = TSOP48 12 x 20mm (all devices)
ZA = VFBGA63 9.5 x 12 x 1mm, 0.8mm pitch (1Gb devices)
ZB = TFBGA63 9.5 x 12 x 1.2mm, 0.8mm pitch (2Gb Dual Die devices)
Temperature Range
1 = 0 to 70 °C
6 = –40 to 85 °C
Option
E = Lead Free Package, Standard Packing
F = Lead Free Package, Tape & Reel Packing
DD
DD
= 1.7 to 1.95V
= 2.7 to 3.6V
Ordering Information Scheme
NAND02GR3B
NAND01G-B, NAND02G-B
2
A N
6
E