M29DW640F70N6E NUMONYX, M29DW640F70N6E Datasheet - Page 31

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M29DW640F70N6E

Manufacturer Part Number
M29DW640F70N6E
Description
IC FLASH 64MBIT 70NS 48TSOP
Manufacturer
NUMONYX
Series
Axcell™r
Datasheet

Specifications of M29DW640F70N6E

Format - Memory
FLASH
Memory Type
FLASH - Nor
Memory Size
64M (8Mx8, 4Mx16)
Speed
70ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M29DW640F70N6E
Manufacturer:
ST
Quantity:
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Part Number:
M29DW640F70N6E
Manufacturer:
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0
M29DW640F
Table 8.
1. Typical values measured at room temperature and nominal voltages.
2. Sampled, but not 100% tested.
3. Maximum value measured at worst case conditions for both temperature and V
4. Maximum value measured at worst case conditions for both temperature and V
Chip Erase
Block Erase (64 KBytes)
Erase Suspend latency time
Byte Program (1, 2, 4 or 8 at-a-time)
Word Program (1, 2 or 4 at-a-time)
Chip Program (Byte by Byte)
Chip Program (Word by Word)
Chip Program (quadruple Byte or double Word)
Chip Program (octuple Byte or quadruple Word)
Program Suspend latency time
Program/Erase cycles (per Block)
Data Retention
Program, Erase times and Program, Erase Endurance cycles
Parameter
100,000
Min
20
CC
CC
.
after 100,00 program/erase cycles.
Typ
0.8
10
80
10
80
40
20
10
(1)(2)
Command interface
Max
200
400
200
400
200
100
50
50
6
4
(4)
(4)
(3)
(3)
(3)
(3)
(3)
(3)
(3)
(2)
cycles
years
Unit
µs
µs
µs
µs
s
s
s
s
s
s
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