M29DW640F70N6E NUMONYX, M29DW640F70N6E Datasheet - Page 25

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M29DW640F70N6E

Manufacturer Part Number
M29DW640F70N6E
Description
IC FLASH 64MBIT 70NS 48TSOP
Manufacturer
NUMONYX
Series
Axcell™r
Datasheet

Specifications of M29DW640F70N6E

Format - Memory
FLASH
Memory Type
FLASH - Nor
Memory Size
64M (8Mx8, 4Mx16)
Speed
70ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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M29DW640F
4.1.10
4.2
4.2.1
Program command
The Program command can be used to program a value to one address in the memory array
at a time. The command requires four Bus Write operations, the final Write operation latches
the address and data in the internal state machine and starts the Program/Erase Controller.
Programming can be suspended and then resumed by issuing a Program Suspend
command and a Program Resume command, respectively (see
Suspend command
If the address falls in a protected block then the Program command is ignored, the data
remains unchanged. The Status Register is never read and no error condition is given.
After programming has started, Bus Read operations in the Bank being programmed output
the Status Register content, while Bus Read operations to the other Bank output the
contents of the memory array. See the section on the Status Register for more details.
Typical program times are given in
After the program operation has completed the memory will return to the Read mode, unless
an error has occurred. When an error occurs Bus Read operations to the Bank where the
command was issued will continue to output the Status Register. A Read/Reset command
must be issued to reset the error condition and return to Read mode.
Note that the Program command cannot change a bit set at ’0’ back to ’1’. One of the Erase
Commands must be used to set all the bits in a block or in the whole memory from ’0’ to ’1’.
Fast Program commands
There are five Fast Program commands available to improve the programming throughput,
by writing several adjacent Words or Bytes in parallel.
When V
Program mode. The user can then choose to issue any of the Fast Program commands.
Care must be taken because applying a V
any protected block. Fast programming should not be attempted when V
Double Word Program
This is used to write two adjacent Words in x16 mode, in parallel. The addresses of the two
Words must differ only in A0.
Three bus write cycles are necessary to issue the command.
1.
2.
3.
The first bus cycle sets up the command.
The second bus cycle latches the Address and the Data of the first Word to be written.
The third bus cycle latches the Address and the Data of the second Word to be written
and starts the Program/Erase Controller.
PPH
is applied to the V
and
Section 4.1.9: Program Resume
command
PP
/Write Protect pin the memory automatically enters the Fast
Table
8.
PPH
to the V
PP
/WP pin will temporarily unprotect
command).
Section 4.1.8: Program
Command interface
PP
is not at V
PPH
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