M29DW323DB90N6 STMicroelectronics, M29DW323DB90N6 Datasheet - Page 24
![IC FLASH 32MBIT 90NS 48TSOP](/photos/7/26/72669/497-48-tsop_series_sml.jpg)
M29DW323DB90N6
Manufacturer Part Number
M29DW323DB90N6
Description
IC FLASH 32MBIT 90NS 48TSOP
Manufacturer
STMicroelectronics
Datasheet
1.M29DW323DB70N6.pdf
(50 pages)
Specifications of M29DW323DB90N6
Format - Memory
FLASH
Memory Type
FLASH - Nor
Memory Size
32M (4Mx8, 2Mx16)
Speed
90ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
M29DW323DT, M29DW323DB
Table 14. DC Characteristics
Note: 1. Sampled only, not 100% tested.
24/50
I
Symbol
CC3
I
CC1
V
I
V
V
V
V
V
I
I
CC2
V
I
LKO
LO
PP
OH
LI
PP
OL
2. In Dual operations the Supply Current will be the sum of
IH
ID
IL
(1,2)
(2)
Input Leakage Current
Output Leakage Current
Supply Current (Read)
Supply Current (Standby)
Supply Current (Program/
Erase)
Input Low Voltage
Input High Voltage
Voltage for
Acceleration
Current for
Acceleration
Output Low Voltage
Output High Voltage
Identification Voltage
Program/Erase Lockout Supply
Voltage
Parameter
V
V
PP
PP
/WP
/WP
Program
Program
Controller active
Program/Erase
V
V
0V
E = V
RP = V
Test Condition
0V
E = V
CC
CC
I
OH
I
I
CC1
OL
f = 6MHz
= 2.7V ±10%
= 2.7V ±10%
V
= –100
IL
= 1.8mA
V
(read) and
CC
OUT
, G = V
CC
IN
±0.2V,
V
±0.2V
V
PP
µ
V
V
V
CC
A
PP
IH
/WP = V
CC
IL
I
,
CC3
/WP =
or V
(program/erase).
IH
PP
V
0.7V
CC
–0.5
11.5
11.5
Min
1.8
–0.4
CC
V
CC
Max
12.5
0.45
12.5
100
0.8
2.3
±1
±1
10
20
20
15
+0.3
Unit
mA
mA
mA
mA
µ
µ
µ
V
V
V
V
V
V
V
A
A
A