CY7C1471V33-133AXCT Cypress Semiconductor Corp, CY7C1471V33-133AXCT Datasheet - Page 23

• Manufacturer Part Number: CY7C1471V33-133AXCT
• Description: IC SRAM 72MBIT 133MHZ 100LQFP
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1471V33-133AXCT

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Memory Size: 72M (2M x 36)
• Speed: 133MHz
• Interface: Parallel
• Voltage - Supply: 3.135 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 100-LQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Maximum Ratings
Exceeding maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage temperature ................................ –65 C to +150 C
Ambient temperature with
power applied ........................................... –55 C to +125 C
Supply voltage on V
Supply voltage on V
DC voltage applied to outputs
in tri-state...........................................–0.5 V to V
Electrical Characteristics
Over the Operating Range
Notes
Document Number: 38-05288 Rev. *L
V
V
V
V
V
V
I
I
I
I
I
I
I
16. Overshoot: V
17. T
Parameter
X
OZ
DD
SB1
SB2
SB3
SB4
DD
DDQ
OH
OL
IH
IL
Power-up
: assumes a linear ramp from 0 V to V
Power supply voltage
IO supply voltage
Output HIGH voltage
Output LOW voltage
Input HIGH voltage
Input LOW voltage
Input leakage current
except ZZ and MODE
Input current of MODE
Input current of ZZ
Output leakage current GND  V
V
current
Automatic CE
power-down
current—TTL inputs
Automatic CE
power-down
current—CMOS inputs
Automatic CE
power-down
current—CMOS inputs
Automatic CE
power-down
current—TTL inputs
IH
DD
(AC) < V
operating supply
Description
DD
DDQ
DD
relative to GND ........–0.5 V to +4.6 V
+ 1.5 V (pulse width less than t
relative to GND....... –0.5 V to +V
[16, 17]
[16]
[16]
For 3.3 V IO
For 2.5 V IO
For 3.3 V IO, I
For 2.5 V IO, I
For 3.3 V IO, I
For 2.5 V IO, I
For 3.3 V IO
For 2.5 V IO
For 3.3 V IO
For 2.5 V IO
GND  V
Input = V
Input = V
Input = V
Input = V
V
f = f
V
V
f = f
V
V
f = 0, inputs static
V
V
f = f
V
V
f = 0, inputs static
DD
DD
DD
IN
DD
IN
DD
IN
DD
IN
(min) within 200 ms. During this time V
MAX
 V
MAX
 0.3 V or V
 0.3 V or V
MAX
 V
= Max, I
= Max, device deselected,
= Max, device deselected,
= Max, device deselected, or
= Max, device deselected,
IH
DD
, inputs switching
, inputs switching
= 1/t
I
SS
DD
SS
DD
I
DDQ
or V
CYC
 V
 V
– 0.3 V or V
OUT
/2). Undershoot: V
CYC
DDQ
DD,
IN
OH
OH
OL
OL
+ 0.5 V
IN
IN
 V
= 0 mA,
= 8.0 mA
= 1.0 mA
output disabled
= –4.0 mA
= –1.0 mA
> V
> V
DD
IL
Test Conditions
DDQ
DD
IN
– 0.3 V,
 0.3 V,
– 0.3 V
IL
(AC) > –2 V (pulse width less than t
DC input voltage .................................. –0.5 V to V
Current into outputs (LOW) ......................................... 20 mA
Static discharge voltage.......................................... > 2001 V
(MIL-STD-883, method 3015)
Latch-up current .................................................... > 200 mA
Operating Range
Commercial
Industrial
Range
IH
All speeds
All Speeds
7.5 ns cycle, 133 MHz
10 ns cycle, 117 MHz
7.5 ns cycle, 133 MHz
10 ns cycle, 117 MHz
7.5 ns cycle, 133 MHz
10 ns cycle, 117 MHz
< V
DD
and V
–40 C to +85 C
0 C to +70 C
Temperature
DDQ
Ambient
< V
DD
.
CYC
/2).
3.135
3.135
2.375
–0.3
–0.3
Min
–30
2.4
2.0
2.0
1.7
–5
–5
–5
–
–
–
–
–
–
–
–
–
–
–
–
3.3 V– 5% /
+ 10%
V
CY7C1471V33
CY7C1473V33
CY7C1475V33
DD
V
V
DD
DD
2.625
Max
V
305
275
200
200
120
200
200
165
3.6
0.4
0.4
0.8
0.7
30
–
–
+ 0.3V
+ 0.3V
5
–
5
–
5
DD
Page 23 of 36
DD
2.5 V – 5%
to V
V
+ 0.5 V
Unit
mA
mA
mA
mA
mA
mA
mA
mA
A
A
A
A
A
A
DDQ
V
V
V
V
V
V
V
V
V
V
V
DD
[+] Feedback