CY7C1471V33-117AXC Cypress Semiconductor Corp, CY7C1471V33-117AXC Datasheet - Page 19

• Manufacturer Part Number: CY7C1471V33-117AXC
• Description: IC SRAM 72MBIT 117MHZ 100LQFP
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1471V33-117AXC

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Memory Size: 72M (2M x 36)
• Speed: 117MHz
• Interface: Parallel
• Voltage - Supply: 3.135 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 100-LQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document #: 38-05288 Rev. *I
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied............................................. –55°C to +125°C
Supply Voltage on V
Supply Voltage on V
DC Voltage Applied to Outputs
in Tri-State........................................... –0.5V to V
DC Input Voltage....................................–0.5V to V
Electrical Characteristics
V
V
V
V
V
V
I
I
I
I
I
I
I
Notes:
14. Overshoot: V
15. T
Parameter
X
OZ
DD
SB1
SB2
SB3
SB4
DD
DDQ
OH
OL
IH
IL
Power-up
: Assumes a linear ramp from 0V to V
Power Supply Voltage
I/O Supply Voltage
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage Current
except ZZ and MODE
Input Current of MODE Input = V
Input Current of ZZ
Output Leakage Current GND ≤ V
V
Current
Automatic CE
Power-down
Current—TTL Inputs
Automatic CE
Power-down
Current—CMOS Inputs
Automatic CE
Power-down
Current—CMOS Inputs
Automatic CE
Power-down
Current—TTL Inputs
IH
DD
(AC) < V
Operating Supply
Description
DD
DDQ
DD
Relative to GND........ –0.5V to +4.6V
+1.5V (Pulse width less than t
Relative to GND ...... –0.5V to +V
[14]
[14]
Over the Operating Range
for 3.3V I/O
for 2.5V I/O
for 2.5V I/O, I
for 2.5V I/O, I
for 3.3V I/O
for 2.5V I/O
for 3.3V I/O
for 2.5V I/O
GND ≤ V
Input = V
Input = V
Input = V
V
f = f
V
V
f = f
V
V
f = 0, inputs static
V
V
f = f
V
V
f = 0, inputs static
for 3.3V I/O, I
for 3.3V I/O, I
DD
DD
DD
IN
DD
IN
DD
IN
DD
IN
(min.) within 200 ms. During this time V
MAX
MAX
MAX
≥ V
≤ 0.3V or V
≤ 0.3V or V
≥ V
= Max, Device Deselected, or
= Max., I
= Max, Device Deselected,
= Max, Device Deselected,
= Max, Device Deselected,
IH
DD
, inputs switching
, inputs switching
= 1/t
I
I
CYC
SS
DD
SS
DD
or V
≤ V
≤ V
DDQ
– 0.3V or V
DD
/2), undershoot: V
CYC
OUT
OH
OH
OL
OL
DDQ
DD,
IN
+ 0.5V
+ 0.5V
IN
IN
= 8.0 mA
= 1.0 mA
≤ V
= –4.0 mA
= –1.0 mA
Output Disabled
= 0 mA,
> V
> V
DD
IL
Test Conditions
DD
DDQ
[14, 15]
IN
– 0.3V,
≤
– 0.3V
IL
0.3V
Current into Outputs (LOW)......................................... 20 mA
Static Discharge Voltage........................................... >2001V
(per MIL-STD-883, Method 3015)
Latch-up Current..................................................... >200 mA
Operating Range
(AC) > –2V (Pulse width less than t
Commercial
Industrial
,
Range
IH
All speeds
All Speeds
7.5-ns cycle, 133 MHz
10-ns cycle, 117 MHz
7.5-ns cycle, 133 MHz
10-ns cycle, 117 MHz
7.5-ns cycle, 133 MHz
10-ns cycle, 117 MHz
< V
DD
and V
–40°C to +85°C
Temperature
0°C to +70°C
Ambient
DDQ
< V
DD
.
CYC
/2).
3.3V –5%/+10% 2.5V – 5%
3.135
3.135
2.375
Min.
–0.3
–0.3
–30
2.4
2.0
2.0
1.7
–5
–5
–5
CY7C1471V33
CY7C1473V33
CY7C1475V33
V
DD
V
V
DD
DD
2.625
Max.
V
Page 19 of 29
335
305
200
200
150
200
200
165
3.6
0.4
0.4
0.8
0.7
30
+ 0.3V
+ 0.3V
5
5
5
DD
to V
V
DDQ
DD
Unit
mA
mA
mA
mA
mA
mA
mA
mA
µA
µA
µA
µA
µA
µA
V
V
V
V
V
V
V
V
V
V
V