CY7C1021BN-12VXCT Cypress Semiconductor Corp, CY7C1021BN-12VXCT Datasheet - Page 4

• Manufacturer Part Number: CY7C1021BN-12VXCT
• Description: IC SRAM 1MBIT 12NS 44SOJ
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1021BN-12VXCT

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 1M (64K x 16)
• Speed: 12ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 44-SOJ
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document #: 001-06494 Rev. *A
AC Test Loads and Waveforms
Thermal Resistance
Switching Characteristics
OUTPUT
OUTPUT
Read Cycle
t
t
t
t
t
t
t
t
t
t
t
t
t
t
Notes:
Parameter
RC
AA
OHA
ACE
DOE
LZOE
HZOE
LZCE
HZCE
PU
PD
DBE
LZBE
HZBE
5. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified
6. At any given temperature and voltage condition, t
7. t
Equivalent to: THÉVENIN
Equivalent to: THÉVENIN
Parameter
I
voltage.
INCLUDING
INCLUDING
JIG AND
JIG AND
SCOPE
SCOPE
Θ
Θ
OL
HZOE
/I
5V
5V
JA
JC
OH
, t
HZBE
and 30-pF load capacitance.
30 pF
30 pF
Thermal Resistance
(Junction to Ambient)
Thermal Resistance
(Junction to Case)
, t
HZCE
(a)
(a)
EQUIVALENT
EQUIVALENT
Description
Read Cycle Time
Address to Data Valid
Data Hold from Address Change
CE LOW to Data Valid
OE LOW to Data Valid
OE LOW to Low Z
OE HIGH to High Z
CE LOW to Low Z
CE HIGH to High Z
CE LOW to Power-Up
CE HIGH to Power-Down
Byte Enable to Data Valid
Byte Enable to Low Z
Byte Disable to High Z
, and t
R 481Ω
HZWE
[4]
are specified with a load capacitance of 5 pF as in part (b) of AC Test Loads. Transition is measured ±500 mV from steady-state
OUTPUT
OUTPUT
255
255Ω
R2
R2
Description
[5]
Test conditions follow standard test methods
and procedures for measuring thermal
impedance, per EIA / JESD51.
OUTPUT
OUTPUT
[6]
[6]
Over the Operating Range
[6, 7]
[6, 7]
INCLUDING
INCLUDING
JIG AND
JIG AND
SCOPE
SCOPE
5V
5V
HZCE
30 pF
30 pF
is less than t
167
167
5 pF
5 pF
Test Conditions
(b)
(b)
R 481Ω
LZCE
, t
1.73V
Min.
HZOE
7C10211B-10
10
3
0
3
0
0
255
255Ω
R2
R2
is less than t
Max.
GND
GND
3.0V
3.0V
10
10
10
Rise Time: 1 V/ns
Rise Time: 1 V/ns
5
5
5
5
5
LZOE
, and t
Min.
7C1021B-12
12
3
0
3
0
0
44-pin SOJ
HZWE
64.32
31.03
10%
10%
is less than t
90%
90%
Max.
12
12
12
6
6
6
6
6
ALL INPUT PULSES
ALL INPUT PULSES
LZWE
44-pin TSOP-II
Min.
CY7C10211BN
7C1021B-15
15
for any given device.
3
0
3
0
0
CY7C1021BN
76.89
14.28
Max.
15
15
15
7
7
7
7
7
Page 4 of 10
Fall Time: 1 V/ns
90%
90%
10%
10%
°C/W
°C/W
Unit
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
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