CY7C1021BN-15VXE Cypress Semiconductor Corp, CY7C1021BN-15VXE Datasheet

IC SRAM 1MBIT 15NS 44SOJ

CY7C1021BN-15VXE

Manufacturer Part Number
CY7C1021BN-15VXE
Description
IC SRAM 1MBIT 15NS 44SOJ
Manufacturer
Cypress Semiconductor Corp
Type
Asynchronousr
Datasheet

Specifications of CY7C1021BN-15VXE

Memory Size
1M (64K x 16)
Package / Case
44-SOJ
Format - Memory
RAM
Memory Type
SRAM - Asynchronous
Speed
15ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
-40°C ~ 125°C
Access Time
15 ns
Supply Voltage (max)
5.5 V
Supply Voltage (min)
4.5 V
Maximum Operating Current
130 mA
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Number Of Ports
1
Operating Supply Voltage
5 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Features
Cypress Semiconductor Corporation
Document #: 001-06494 Rev. *C
Note
Logic Block Diagram
1. For best practice recommendations, refer to the Cypress application note,
Temperature ranges
High speed
Complementary metal oxide semiconductor (CMOS) for
optimum speed/power
Low active power
Automatic power down when deselected
Independent control of upper and lower bits
Available in Pb-free and non Pb-free 44-pin TSOP II and
44-pin 400-mil-wide SOJ
Commercial: 0 °C to 70 °C
Industrial: –40 °C to 85 °C
Automotive-A: –40 °C to 85 °C
Automotive-E: –40 °C to 125 °C
t
t
825 mW (maximum)
AA
AA
= 10 ns (Commercial)
= 15 ns (Automotive)
A
A
A
A
A
A
A
A
4
3
2
1
0
7
6
5
Data In Drivers
Column Decoder
512 X 2048
RAM Array
64K x 16
198 Champion Court
SRAM System Design
Functional Description
The CY7C1021BN/CY7C10211BN
CMOS static RAM organized as 65,536 words by 16 bits. This
device has an automatic power down feature that significantly
reduces power consumption when deselected.
Writing to the device is accomplished by taking Chip Enable (CE)
and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is
LOW, then data from the input/output (I/O) pins (I/O
I/O
through A
I/O pins (I/O
on the address pins (A
Reading from the device is accomplished by taking CE and
Output Enable (OE) LOW while forcing WE HIGH. If BLE is LOW,
then data from the memory location specified by the address pins
appears on I/O
appears on I/O
complete description of read and write modes.
The I/O pins (I/O
state when the device is deselected (CE HIGH), the outputs are
disabled (OE HIGH), the BHE and BLE are disabled (BHE, BLE
HIGH), or during a write operation (CE LOW, WE LOW).
The CY7C1021BN/CY7C10211BN is available in standard
44-pin TSOP type II and 44-pin 400-mil-wide SOJ packages.
Use part number CY7C10211BN when ordering parts with 10 ns
t
AA
8
and CY7C1021BN when ordering 12 ns and 15 ns t
), is written into the location specified on the address pins (A
15
1 Mbit (64K x 16) Static RAM
San Jose
). If Byte High Enable (BHE) is LOW, then data from
Guidelines-AN1064.
9
through I/O
CY7C1021BN, CY7C10211BN
1
9
to I/O
1
to I/O
I/O
I/O
through I/O
WE
OE
BHE
CE
BLE
1
9
–I/O
–I/O
,
8
0
. If BHE is LOW, then data from memory
CA 95134-1709
16
through A
. See the
8
16
16
) is written into the location specified
16
) are placed in a high impedance
15
Truth Table on page 9
[1]
Revised June 11, 2010
).
is a high performance
• 408-943-2600
1
AA
through
.
for a
0
[+] Feedback

Related parts for CY7C1021BN-15VXE

CY7C1021BN-15VXE Summary of contents

Page 1

... HIGH), the BHE and BLE are disabled (BHE, BLE HIGH), or during a write operation (CE LOW, WE LOW). The CY7C1021BN/CY7C10211BN is available in standard 44-pin TSOP type II and 44-pin 400-mil-wide SOJ packages. Use part number CY7C10211BN when ordering parts with and CY7C1021BN when ordering 12 ns and Data In Drivers 64K x 16 RAM Array 512 X 2048 ...

Page 2

... Selection Guide ...................................................................3 Pin Configuration ................................................................3 Pin Definitions ................................................................3 Maximum Ratings ................................................................4 Operating Range ..................................................................4 Electrical Characteristics ....................................................4 Capacitance .........................................................................5 Thermal Resistance .............................................................5 Document #: 001-06494 Rev. *C CY7C1021BN, CY7C10211BN Switching Characteristics....................................................6 Switching Waveforms .........................................................7 Truth Table ...........................................................................9 Ordering Information ...........................................................10 Ordering Code Definition ................................................10 Package Diagrams ...............................................................11 Acronyms .............................................................................12 Document History Page ......................................................13 Sales, Solutions, and Legal Information ...........................13 Worldwide Sales and Design Support ...

Page 3

... LOW, the I/O pins are allowed to behave as outputs. When deasserted HIGH, I/O pins are tristated, and act as input data pins. Ground Ground for the device. Should be connected to ground of the system. Power Supply Power supply inputs to the device. CY7C1021BN, CY7C10211BN 150 140 ...

Page 4

... Automotive-A > < Automotive-E IL MAX , Commercial/Industrial CC – 0 Commercial/Industrial (L) > V – 0 < 0 Automotive-A (L) IN Automotive-E CY7C1021BN, CY7C10211BN Ambient Temperature V [ °C to +70 ° ± 10% –40 °C to +85 °C –40 °C to +85 °C –40 °C to +125 °C -10 -12 -15 Min Max Min Max Min Max 2 ...

Page 5

... INCLUDING INCLUDING JIG AND JIG AND Rise Time: 1 V/ns Rise Time: 1 V/ns SCOPE SCOPE (b) (b) 167 Ω 167 1. CY7C1021BN, CY7C10211BN Max Unit 44-Pin SOJ 44-Pin TSOP-II °C/W 64.32 76.89 °C/W 31.03 14.28 ALL INPUT PULSES ALL INPUT PULSES ...

Page 6

... The input data setup and hold timing should be referenced to the leading edge of the signal that terminates the write. Document #: 001-06494 Rev. *C CY7C10211B-10 CY7C1021B-12 Min Max Min less than less than less than t LZCE HZOE LZOE HZBE CY7C1021BN, CY7C10211BN CY7C1021B-15 Unit Max Min Max - ...

Page 7

... Device is continuously selected. OE, CE, BHE, and BHE = V 10 HIGH for read cycle. 11. Address valid prior to or coincident with CE transition LOW. Document #: 001-06494 Rev. *C [9, 10] Figure 3. Read Cycle No OHA t RC DATA VALID 50 CY7C1021BN, CY7C10211BN DATA VALID [10, 11] t HZOE t HZCE t HZBE HIGH IMPEDANCE ICC CC 50% I ...

Page 8

... Figure 6. Write Cycle No. 2 (BLE or BHE Controlled) ADDRESS t SA BHE, BLE WE CE DATA I/O Notes 12. Data I/O is high impedance BHE and/or BLE goes HIGH simultaneously with WE going HIGH, the output remains in a high impedance state. Document #: 001-06494 Rev. *C CY7C1021BN, CY7C10211BN [12, 13 SCE PWE t BW ...

Page 9

... Read - Lower bits only Data out Read - Upper bits only Data In Write - All bits High Z Write - Lower bits only Data In Write - Upper bits only High Z Selected, outputs disabled High Z Selected, outputs disabled CY7C1021BN, CY7C10211BN LZWE Mode Power Standby (I Active (I CC Active (I ...

Page 10

... Cypress maintains a worldwide network of offices, solution centers, manufacturers’ representatives and distributors. To find the office closest to you, visit us at http://www.cypress.com/go/datasheet/offices. Speed (ns) Ordering Code 12 CY7C1021BN-12ZXC 15 CY7C1021BNL-15VXC CY7C1021BN-15ZXC CY7C1021BN-15ZXI CY7C1021BNL-15ZXI CY7C1021BNL-15ZSXA CY7C1021BN-15VXE CY7C1021BN-15ZSXE Ordering Code Definition Technology: 250 nm Speed = ns; without ns Bus Width: x16 Density: 2 Mbit ...

Page 11

... Package Diagrams Document #: 001-06494 Rev. *C CY7C1021BN, CY7C10211BN Figure 8. 44-Pin (400-Mil) Molded SOJ Figure 9. 44-Pin TSOP II 51-85082 *C 51-85087 *C Page [+] Feedback ...

Page 12

... Table 1. Acronyms Used in this Document Acronym Description BHE Byte high enable BLE Byte low enable CE Chip enable CMOS Complementary metal oxide semiconductor I/O Input/output OE Output enable SRAM Static random access memory TSOP Thin small outline package WE Write enable Document #: 001-06494 Rev. *C CY7C1021BN, CY7C10211BN Page [+] Feedback ...

Page 13

... Document History Page Document Title: CY7C1021BN, CY7C10211BN 1 Mbit (64K x 16) Static RAM Document Number: 001-06494 Submission Orig. of Rev. ECN No. Date Change ** 423877 See ECN *A 505726 See ECN *B 2897061 03/22/10 *C 2947254 06/08/10 RAME Sales, Solutions, and Legal Information Worldwide Sales and Design Support Cypress maintains a worldwide network of offices, solution centers, manufacturers’ ...

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