CY7C037V-20AXC Cypress Semiconductor Corp, CY7C037V-20AXC Datasheet - Page 7

IC SRAM 576KBIT 20NS 100LQFP

CY7C037V-20AXC

Manufacturer Part Number
CY7C037V-20AXC
Description
IC SRAM 576KBIT 20NS 100LQFP
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY7C037V-20AXC

Format - Memory
RAM
Memory Type
SRAM - Dual Port, Asynchronous
Memory Size
576K (32K x 18)
Speed
20ns
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
100-LQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY7C037V-20AXC
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Document #: 38-06078 Rev. *A
AC Test Loads and Waveforms
Switching Characteristics
OUTPUT
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
Notes:
11. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified
12. To access RAM, CE=L, UB=L, SEM=H. To access semaphore, CE=H and SEM=L. Either condition must be valid for the entire t
13. At any given temperature and voltage condition for any given device, t
14. Test conditions used are Load 2.
15. This parameter is guaranteed by design, but it is not production tested. For information on port-to-port delay through RAM cells from writing port to reading
RC
AA
OHA
ACE
DOE
LZOE
HZOE
LZCE
HZCE
PU
PD
ABE
WC
SCE
AW
HA
SA
PWE
SD
Read Cycle
Write Cycle
C = 30 pF
Parameter
(a) Normal Load (Load 1)
[15]
[15]
[12]
[12]
[12]
[12]
I
port, refer to Read Timing with Busy waveform.
OI
[13, 14, 15]
[13, 14, 15]
[13, 14, 15]
[13, 14, 15]
/I
OH
and 30-pF load capacitance.
Read Cycle Time
Address to Data Valid
Output Hold From Address Change
CE LOW to Data Valid
OE LOW to Data Valid
OE LOW to Low Z
OE HIGH to High Z
CE LOW to Low Z
CE HIGH to High Z
CE LOW to Power-Up
CE HIGH to Power-Down
Byte Enable Access Time
Write Cycle Time
CE LOW to Write End
Address Valid to Write End
Address Hold From Write End
Address Set-Up to Write Start
Write Pulse Width
Data Set-Up to Write End
3.3V
R1 = 590Ω
R2 = 435Ω
Description
Over the Operating Range
GND
3.0V
OUTPUT
3 ns
(b) Thévenin Equivalent (Load 1)
10%
C = 30 pF
ALL INPUT PULSES
90%
[11]
HZCE
R
TH
Min.
is less than t
15
15
12
12
12
10
= 250Ω
3
3
3
0
0
0
-15
LZCE
Max.
15
15
10
10
10
15
15
90%
V
and t
TH
10%
= 1.4V
HZOE
CY7C037V/038V
3 ns
Min.
20
20
16
16
17
12
is less than t
3
3
3
0
0
0
OUTPUT
-20
(c) Three-State Delay (Load 2)
C = 5 pF
Max.
LZOE
20
20
20
12
12
12
20
(Used for t
including scope and jig)
.
SCE
CY7C027V/028V
CY7C037V/038V
time.
Min.
25
25
20
20
22
15
3
3
3
0
0
0
LZ
, t
-25
HZ
Max.
, t
3.3V
25
25
13
15
15
25
25
HZWE
Page 7 of 18
R1 = 590Ω
R2 = 435Ω
, & t
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
LZWE
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