M25P40-VMP6 STMicroelectronics, M25P40-VMP6 Datasheet - Page 30

IC FLASH 4MBIT 40MHZ 8VFQFPN

M25P40-VMP6

Manufacturer Part Number
M25P40-VMP6
Description
IC FLASH 4MBIT 40MHZ 8VFQFPN
Manufacturer
STMicroelectronics
Datasheet

Specifications of M25P40-VMP6

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
4M (512K x 8)
Speed
40MHz
Interface
SPI, 3-Wire Serial
Voltage - Supply
2.3 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-VFQFN, 8-VFQFPN
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
497-3599

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Instructions
6.10
30/51
Bulk Erase (BE)
The Bulk Erase (BE) instruction sets all bits to 1 (FFh). Before it can be accepted, a Write
Enable (WREN) instruction must previously have been executed. After the Write Enable
(WREN) instruction has been decoded, the device sets the Write Enable Latch (WEL).
The Bulk Erase (BE) instruction is entered by driving Chip Select (S) Low, followed by the
instruction code on Serial Data Input (D). Chip Select (S) must be driven Low for the entire
duration of the sequence.
The instruction sequence is shown in
Chip Select (S) must be driven High after the eighth bit of the instruction code has been
latched in, otherwise the Bulk Erase instruction is not executed. As soon as Chip Select (S)
is driven High, the self-timed Bulk Erase cycle (whose duration is t
Bulk Erase cycle is in progress, the Status Register may be read to check the value of the
Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the self-timed Bulk
Erase cycle, and is 0 when it is completed. At some unspecified time before the cycle is
completed, the Write Enable Latch (WEL) bit is reset.
The Bulk Erase (BE) instruction is executed only if all Block Protect (BP2, BP1, BP0) bits are
0. The Bulk Erase (BE) instruction is ignored if one, or more, sectors are protected.
Figure 16. Bulk Erase (BE) Instruction Sequence
S
C
D
0
Figure
1
2
Instruction
16.
3
4
5
6
7
AI03752D
BE
) is initiated. While the
M25P40

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