M25P40-VMN6P NUMONYX, M25P40-VMN6P Datasheet - Page 40
![IC FLASH 4MBIT 50MHZ 8SOIC](/photos/7/30/73033/m25p40-vmn6p_sml.jpg)
M25P40-VMN6P
Manufacturer Part Number
M25P40-VMN6P
Description
IC FLASH 4MBIT 50MHZ 8SOIC
Manufacturer
NUMONYX
Series
Forté™r
Specifications of M25P40-VMN6P
Format - Memory
FLASH
Memory Type
FLASH
Memory Size
4M (512K x 8)
Speed
50MHz
Interface
SPI, 3-Wire Serial
Voltage - Supply
2.3 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-SOIC (3.9mm Width)
Memory Configuration
512K X 8
Ic Interface Type
Serial, SPI
Clock Frequency
50MHz
Supply Voltage Range
2.3V To 3.6V
Memory Case Style
SOIC
No. Of Pins
8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-3598
497-3598
497-3598
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M25P40-VMN6P
Manufacturer:
ST
Quantity:
20 000
Company:
Part Number:
M25P40-VMN6PB
Manufacturer:
ST
Quantity:
102
Part Number:
M25P40-VMN6PB
Manufacturer:
ST
Quantity:
20 000
Part Number:
M25P40-VMN6PBA
Manufacturer:
MICRON
Quantity:
20 000
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Table 15.
1. This is preliminary data.
Table 16.
1. 110 nm technology devices are identified by process identification digit "4" in the device marking and
2. When using the Page Program (PP) instruction to program consecutive bytes, optimized timings are
Symbol
Symbol
t
I
I
I
I
I
I
I
V
V
PP
V
I
CC1
CC2
CC3
CC4
CC5
CC6
CC7
V
process letter "B" in the part number
obtained with one sequence including all the bytes versus several sequences of only a few bytes
(1 ≤ n ≤ 256).
t
t
I
LO
t
OH
LI
OL
SE
BE
IH
W
IL
(2)
Input leakage current
Output leakage current
Standby current
Deep Power-down current
Operating current (READ)
Operating current (PP)
Operating current (WRSR)
Operating current (SE)
Operating current (BE)
Input low voltage
Input high voltage
Output low voltage
Output high voltage
Instruction times, process technology 110 nm
Alt.
DC characteristics (device grade 3)
—
—
—
—
—
Parameter
Write Status Register cycle time
Page Program cycle time (256 bytes)
Page Program cycle time (n bytes)
Sector Erase cycle time
Bulk Erase cycle time
Test conditions specified in
.
Parameter
C = 0.1V
C = 0.1V
Test condition (in addition to
S = V
S = V
and 75 MHz, Q = open
and 33 MHz, Q = open
those in
CC
CC
CC
CC
I
OH
I
OL
, V
, V
S = V
S = V
S = V
S = V
/ 0.9.V
/ 0.9.V
= –100 µA
= 1.6 mA
Table 10
IN
IN
—
—
—
—
Table
= V
= V
CC
CC
CC
CC
CC
CC
SS
SS
at 25 MHz
at 20 MHz
10)
or V
or V
and
Min.
—
—
—
—
—
CC
CC
Table 18
(1)
int (n/8) ×
0.025
V
Typ.
0.7V
1.3
0.8
0.6
4.5
Min
CC
– 0.5
—
—
—
—
—
—
—
—
—
—
—
–0.2
(2)
(1)
CC
Max.
V
0.3V
15
10
Max
5
3
CC
100
± 2
± 2
0.4
50
15
15
15
15
—
8
4
+0.4
(1)
CC
Unit
ms
ms
Unit
s
s
mA
mA
mA
mA
mA
mA
µA
µA
µA
µA
V
V
V
V