M48Z35AV-10MH6E STMicroelectronics, M48Z35AV-10MH6E Datasheet - Page 16

• Manufacturer Part Number: M48Z35AV-10MH6E
• Description: IC NVSRAM 256KBIT 100NS 28SOIC
• Manufacturer: STMicroelectronics
• Type: NVSRAMr

Specifications of M48Z35AV-10MH6E

• Format - Memory: RAM
• Memory Type: NVSRAM (Non-Volatile SRAM)
• Memory Size: 256K (32K x 8)
• Speed: 100ns
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 28-SOIC, 28-SOH (8.48mm Width)
• Word Size: 8b
• Organization: 32Kx8
• Density: 256Kb
• Interface Type: Parallel
• Access Time (max): 100ns
• Operating Supply Voltage (typ): 3.3V
• Package Type: SOH
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Operating Temp Range: -40C to 85C
• Pin Count: 28
• Mounting: Surface Mount
• Supply Current: 50mA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 497-2881-5; M48Z35AV-10MH6

DC and AC parameters
16/25
Table 8.
1. Valid for ambient operating temperature: T
2. Outputs deselected.
Figure 11. Power down/up mode AC waveforms
Symbol
V CC
V PFD (max)
V PFD (min)
V SO
INPUTS
OUTPUTS
I
I
I
I
LO
V
V
I
V
LI
CC1
CC2
V
CC
OH
OL
IH
(2)
IL
(2)
Input leakage current
Output leakage current
Supply current
Supply current (TTL standby)
Supply current (CMOS standby)
Input low voltage
Input high voltage
Output low voltage
Output high voltage
DC characteristics
tPD
(PER CONTROL INPUT)
VALID
RECOGNIZED
Parameter
tF
Doc ID 6784 Rev 8
tFB
A
= 0 to 70 °C; V
0 V ≤ V
Test condition
0 V ≤ V
E = V
Outputs open
I
I
OL
OH
E = V
= 2.1 mA
tDR
CC
= –1 mA
OUT
IN
CC
– 0.2 V
IH
≤ V
= 3.0 to 3.6 V (except where noted).
≤ V
DON'T CARE
HIGH-Z
CC
CC
(1)
tRB
–0.3
Min
2.2
2.4
V
CC
Max
tR
0.8
0.4
±1
±5
50
3
3
+ 0.3
(PER CONTROL INPUT)
trec
M48Z35AV
RECOGNIZED
VALID
AI01168C
Unit
mA
mA
mA
µA
µA
V
V
V
V