M48Z35AV-10MH6E STMicroelectronics, M48Z35AV-10MH6E Datasheet - Page 13

IC NVSRAM 256KBIT 100NS 28SOIC

M48Z35AV-10MH6E

Manufacturer Part Number
M48Z35AV-10MH6E
Description
IC NVSRAM 256KBIT 100NS 28SOIC
Manufacturer
STMicroelectronics
Type
NVSRAMr
Datasheets

Specifications of M48Z35AV-10MH6E

Format - Memory
RAM
Memory Type
NVSRAM (Non-Volatile SRAM)
Memory Size
256K (32K x 8)
Speed
100ns
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
28-SOIC, 28-SOH (8.48mm Width)
Word Size
8b
Organization
32Kx8
Density
256Kb
Interface Type
Parallel
Access Time (max)
100ns
Operating Supply Voltage (typ)
3.3V
Package Type
SOH
Operating Temperature Classification
Industrial
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Operating Temp Range
-40C to 85C
Pin Count
28
Mounting
Surface Mount
Supply Current
50mA
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
497-2881-5
M48Z35AV-10MH6

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Part Number:
M48Z35AV-10MH6E
Manufacturer:
ST
0
M48Z35AV
2.4
V
I
fluctuations, resulting in spikes on the V
capacitors are used to store energy which stabilizes the V
bypass capacitors will be released as low going spikes are generated or energy will be
absorbed when overshoots occur. A ceramic bypass capacitor value of 0.1 µF (see
is recommended in order to provide the needed filtering.
In addition to transients that are caused by normal SRAM operation, power cycling can
generate negative voltage spikes on V
one volt. These negative spikes can cause data corruption in the SRAM while in battery
backup mode. To protect from these voltage spikes, ST recommends connecting a schottky
diode from V
is recommended for through hole and MBRS120T3 is recommended for surface mount).
Figure 9.
CC
CC
transients, including those produced by output switching, can produce voltage
noise and negative going transients
CC
Supply voltage protection
to V
SS
(cathode connected to V
V CC
Doc ID 6784 Rev 8
0.1µF
CC
CC
that drive it to values below V
bus. These transients can be reduced if
CC
, anode to V
V CC
V SS
DEVICE
CC
bus. The energy stored in the
SS
). (Schottky diode 1N5817
SS
Operating modes
by as much as
Figure
AI02169
13/25
9)

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