M28W640ECB90N6 STMicroelectronics, M28W640ECB90N6 Datasheet - Page 41

• Manufacturer Part Number: M28W640ECB90N6
• Description: IC FLASH 64MBIT 90NS 48TSOP
• Manufacturer: STMicroelectronics

Specifications of M28W640ECB90N6

• Format - Memory: FLASH
• Memory Type: FLASH - Nor
• Memory Size: 64M (4M x 16)
• Speed: 90ns
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 497-1698

Table 29. Device Geometry Definition
Offset Word
Mode
2Ch
2Ah
2Bh
27h
28h
29h
2Dh
2Dh
2Eh
2Fh
2Eh
2Fh
30h
31h
32h
33h
34h
30h
31h
32h
33h
34h
0017h
0001h
0000h
0003h
0000h
0002h
007Eh
0000h
0000h
0001h
0007h
0000h
0020h
0000h
0007h
0000h
0020h
0000h
007Eh
0000h
0000h
0001h
Data
Device Size = 2
Flash Device Interface Code description
Maximum number of bytes in multi-byte program or page = 2
Number of Erase Block Regions within the device.
It specifies the number of regions within the device containing contiguous
Erase Blocks of the same size.
Region 1 Information
Number of identical-size erase block = 007Eh+1
Region 1 Information
Block size in Region 1 = 0100h * 256 byte
Region 2 Information
Number of identical-size erase block = 0007h+1
Region 2 Information
Block size in Region 2 = 0020h * 256 byte
Region 1 Information
Number of identical-size erase block = 0007h+1
Region 1 Information
Block size in Region 1 = 0020h * 256 byte
Region 2 Information
Number of identical-size erase block = 007Eh=1
Region 2 Information
Block size in Region 2 = 0100h * 256 byte
n
in number of bytes
Description
M28W640ECT, M28W640ECB
n
64 KByte
64 KByte
8 MByte
8 KByte
8 KByte
Async.
Value
127
127
x16
8
2
8
8
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