CY7C185-25VC Cypress Semiconductor Corp, CY7C185-25VC Datasheet - Page 3

• Manufacturer Part Number: CY7C185-25VC
• Description: IC SRAM 64KBIT 25NS 28SOJ
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C185-25VC

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 64K (8K x 8)
• Speed: 25ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 28-SOJ
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 428-1056

Electrical Characteristics
Capacitance
AC Test Loads and Waveforms
Document #: 38-05043 Rev. *A
OUTPUT
Equivalent to:
V
V
V
V
I
I
I
I
I
I
C
C
Note:
IX
OZ
OS
CC
SB1
SB2
Parameter
5.
OH
OL
IH
IL
IN
OUT
INCLUDING
Tested initially and after any design or process changes that may affect these parameters.
5V
JIG AND
Parameter
SCOPE
30 pF
OUTPUT
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Load Current
Output Leakage
Current
Output Short
Circuit Current
V
Supply Current
Automatic
Power-Down Current
Automatic
Power-Down Current
[5]
(a)
CC
THÉVENIN EQUIVALENT
R1 481
Operating
Description
R2
255
Input Capacitance
Output Capacitance
[4]
167
Over the Operating Range (continued)
OUTPUT
[3]
Description
INCLUDING
5V
V
V
GND
GND
Output Disabled
V
V
V
I
Max. V
Min. Duty Cycle = 100%
Max. V
or CE
V
JIGAND
OUT
SCOPE
CC
CC
CC
OUT
CC
IN
1.73V
5 pF
= Max.,
= Min., I
= Min., I
= Max.,
= 0 mA
2
V
= GND
CC
CC
CC
V
V
(b)
I
I
0.3V
Test Conditions
, CE
, CE
– 0.3V or V
R1 481
V
V
OH
OL
CC
CC
1
1
= 8.0 mA
,
= –4.0 mA
T
V
V
V
A
R2
255
CC
IH
CC
= 25 C, f = 1 MHz,
or CE
IN
= 5.0V
– 0.3V
Test Conditions
0.3V
2
V
IL
GND
3.0V
Min.
–0.5
2.4
2.2
–5
–5
5 ns
7C185-25
10%
V
Max.
–300
0.3V
100
0.4
CC
0.8
+5
+5
20
15
ALL INPUT PULSES
+
90%
Max.
7
7
Min.
–0.5
2.4
2.2
–5
–5
7C185-35
V
Max.
–300
0.3V
100
0.4
0.8
CC
+5
+5
20
15
CY7C185
90%
+
Page 3 of 11
10%
Unit
pF
pF
5 ns
Unit
mA
mA
mA
mA
V
V
V
V
A
A