MT48H4M16LFB4-8 TR Micron Technology Inc, MT48H4M16LFB4-8 TR Datasheet - Page 45
![IC SDRAM 64MBIT 125MHZ 54VFBGA](/photos/7/22/72286/557-54-fbga_sml.jpg)
MT48H4M16LFB4-8 TR
Manufacturer Part Number
MT48H4M16LFB4-8 TR
Description
IC SDRAM 64MBIT 125MHZ 54VFBGA
Manufacturer
Micron Technology Inc
Type
SDRAMr
Specifications of MT48H4M16LFB4-8 TR
Format - Memory
RAM
Memory Type
Mobile SDRAM
Memory Size
64M (4M x 16)
Speed
125MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
0°C ~ 70°C
Package / Case
54-VFBGA
Organization
4Mx16
Density
64Mb
Address Bus
14b
Access Time (max)
8/6ns
Maximum Clock Rate
125MHz
Operating Supply Voltage (typ)
1.8V
Package Type
VFBGA
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
1.95V
Operating Supply Voltage (min)
1.7V
Supply Current
50mA
Pin Count
54
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
557-1281-2
MT48H4M16LFB4-8 TR
MT48H4M16LFB4-8 TR
NOTE:
NOTE:
pdf: 09005aef80a63953, source: 09005aef808a7edc
Y25L_64Mb_2.fm - Rev. E 11/04 EN
1. For this example, the CAS latency = 2.
2. A9 and A11 = “Don’t Care.”
3. Page left open; no
1. CAS latency indicated in parentheses.
SYMBOL
t
t
t
t
AC (3)
AC (2)
CK (3)
CK (2)
t
t
t
t
CKH
t
t
CKS
AH
CH
AS
CL
DQMU, DQML
COMMAND
A0-A9, A11
BA0, BA1
1
CKE
CLK
A10
DQ
MIN
2.5
9.6
2.5
1
3
3
8
1
t CKS
t CMS
t AS
t AS
t AS
ACTIVE
-8
BANK
T0
ROW
ROW
t CKH
MAX
t CMH
t AH
t AH
t AH
100
100
t
RP.
7
8
t RCD
t CL
T1
MIN
NOP
2.5
9.6
2.5
12
t CH
1
3
3
1
-10
t CMS
Figure 41: READ – Full-page Burst
t CK
COLUMN m 2
MAX
100
100
T2
BANK
READ
7
8
t CMH
CAS Latency
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
T3
NOP
t LZ
t AC
T4
D
NOP
OUT
t OH
256 (x16) locations within same row
m
45
t AC
Full-page burst does not self-terminate.
Can use BURST TERMINATE command.
D
T5
OUT
NOP
SYMBOL
t OH
m+1
t
t
Full page completed
t
t
HZ (3)
HZ (2)
t
t
t
t AC
CMH
CMS
t
RCD
RRD
Micron Technology, Inc., reserves the right to change products or specifications without notice.
RAS
t
t
t
OH
RC
RP
LZ
D
T6
NOP
OUT
t OH
t AC
m+2
MIN
(
(
(
(
(
)
)
)
)
)
(
(
(
(
(
(
)
)
)
)
)
)
2.5
(
(
(
(
(
(
(
(
(
)
(
)
(
)
48
80
19
19
16
)
)
)
(
)
(
)
(
)
(
)
(
(
)
)
)
)
)
)
)
(
(
(
(
)
(
)
(
)
)
)
)
1
1
3
Tn + 1
D
NOP
OUT
1
-8
t OH
120,000
m-1
MAX
t AC
7
8
BURST TERM
Tn + 2
3
MOBILE SDRAM
D
OUT
©2003 Micron Technology, Inc. All rights reserved.
t OH
m
MIN
2.5
t AC
50
66
20
20
20
1
1
3
Tn + 3
64Mb: x16
D
-10
OUT
NOP
DON’T CARE
UNDEFINED
120,000
t OH
m+1
t HZ
MAX
7
8
Tn + 4
NOP
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns