MT48H4M16LFB4-8 TR Micron Technology Inc, MT48H4M16LFB4-8 TR Datasheet - Page 31
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MT48H4M16LFB4-8 TR
Manufacturer Part Number
MT48H4M16LFB4-8 TR
Description
IC SDRAM 64MBIT 125MHZ 54VFBGA
Manufacturer
Micron Technology Inc
Type
SDRAMr
Specifications of MT48H4M16LFB4-8 TR
Format - Memory
RAM
Memory Type
Mobile SDRAM
Memory Size
64M (4M x 16)
Speed
125MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
0°C ~ 70°C
Package / Case
54-VFBGA
Organization
4Mx16
Density
64Mb
Address Bus
14b
Access Time (max)
8/6ns
Maximum Clock Rate
125MHz
Operating Supply Voltage (typ)
1.8V
Package Type
VFBGA
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
1.95V
Operating Supply Voltage (min)
1.7V
Supply Current
50mA
Pin Count
54
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
557-1281-2
MT48H4M16LFB4-8 TR
MT48H4M16LFB4-8 TR
Table 12: Electrical Characteristics and Recommended AC Operating Conditions
Notes: 5, 6, 8, 9, 11; notes appear on page 34
pdf: 09005aef80a63953, source: 09005aef808a7edc
Y25L_64Mb_2.fm - Rev. E 11/04 EN
AC CHARACTERISTICS
PARAMETER
Access time from CLK (pos. edge)
Address hold time
Address setup time
CLK high-level width
CLK low-level width
Clock cycle time
CKE hold time
CKE setup time
CS#, RAS#, CAS#, WE#, DQM hold time
CS#, RAS#, CAS#, WE#, DQM setup time
Data-in hold time
Data-in setup time
Data-out high-impedance time
Data-out low-impedance time
Data-out hold time (load)
Data-out hold time (no load)
ACTIVE to PRECHARGE command
ACTIVE to ACTIVE command period
ACTIVE to READ or WRITE delay
Refresh period (4,096 rows)
AUTO REFRESH period
PRECHARGE command period
ACTIVE bank a to ACTIVE bank b command
Transition time
WRITE recovery time
Exit SELF REFRESH to ACTIVE command
CL = 3
CL = 2
CL = 3
CL = 2
CL = 3
CL = 2
SYMBOL
t
t
t
t
t
t
t
t
WR (m)
WR (a)
AC (3)
AC (2)
t
CK (3)
CK (2)
HZ (3)
HZ (2)
t
t
t
t
t
t
t
t
t
CMH
t
t
CMS
t
t
t
CKH
OH
RCD
RRD
t
t
RAS
t
t
t
CKS
t
REF
RFC
XSR
AH
DH
OH
CH
AS
DS
RC
RP
t
CL
LZ
T
N
31
1 CLK
+7ns
MIN
2.5
9.6
1.5
1.5
2.5
2.5
1.8
0.5
48
80
19
80
19
16
15
80
1
3
3
8
1
1
1
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
-8
120,000
MAX
100
100
1.2
64
6
8
7
8
1 CLK
MIN
+5ns
100
100
100
2.5
9.6
2.5
2.5
2.5
2.5
1.8
0.3
12
50
20
20
20
15
1
3
3
1
1
1
1
-10
MOBILE SDRAM
120,000
©2003 Micron Technology, Inc. All rights reserved.
MAX
100
100
1.2
64
7
8
7
8
64Mb: x16
UNITS
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
–
NOTES
27
23
23
10
10
28
24
25
20
7