MT48H4M16LFB4-8 TR Micron Technology Inc, MT48H4M16LFB4-8 TR Datasheet - Page 43
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MT48H4M16LFB4-8 TR
Manufacturer Part Number
MT48H4M16LFB4-8 TR
Description
IC SDRAM 64MBIT 125MHZ 54VFBGA
Manufacturer
Micron Technology Inc
Type
SDRAMr
Specifications of MT48H4M16LFB4-8 TR
Format - Memory
RAM
Memory Type
Mobile SDRAM
Memory Size
64M (4M x 16)
Speed
125MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
0°C ~ 70°C
Package / Case
54-VFBGA
Organization
4Mx16
Density
64Mb
Address Bus
14b
Access Time (max)
8/6ns
Maximum Clock Rate
125MHz
Operating Supply Voltage (typ)
1.8V
Package Type
VFBGA
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
1.95V
Operating Supply Voltage (min)
1.7V
Supply Current
50mA
Pin Count
54
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
557-1281-2
MT48H4M16LFB4-8 TR
MT48H4M16LFB4-8 TR
NOTE:
NOTE:
pdf: 09005aef80a63953, source: 09005aef808a7edc
Y25L_64Mb_2.fm - Rev. E 11/04 EN
1. For this example, the burst length = 4, the CAS latency = 2, and the READ burst is followed by a “manual” PRECHARGE.
2. A9 and A11 = “Don’t Care.”
3. PRECHARGE command not allowed or
1. CAS latency indicated in parentheses.
SYMBOL
t
t
t
t
AC (3)
AC (2)
CK (3)
CK (2)
t
t
t
t
CKH
t
CKS
t
AH
CH
AS
CL
1
DQMU, DQML
MIN MAX
2.5
9.6
2.5
COMMAND
A0-A9, A11
1
3
3
8
1
BA0, BA1
-8
CLK
CKE
A10
DQ
100
100
t CKS
t CMS
7
8
t AS
t AS
t AS
ACTIVE
T0
ROW
ROW
BANK
Figure 39: Single READ – With Auto Precharge
t CMH
t CKH
t AH
t AH
t AH
MIN MAX
2.5
9.6
2.5
12
t RCD
t RAS
t RC
1
3
3
1
t CK
-10
T1
NOP
100
100
7
8
t CL
t
RAS would be violated.
UNITS
T2
NOP 3
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
t CH
T3
NOP 3
ENABLE AUTO PRECHARGE
t CMS
43
COLUMN m 2
T4
BANK
READ
t CMH
CAS Latency
SYMBOL
t
t
t
HZ (3)
HZ (2)
t
t
t
CMH
t
CMS
t
RCD
RAS
t
t
OH
RC
RP
LZ
Micron Technology, Inc., reserves the right to change products or specifications without notice.
T5
NOP
t AC
t RP
MIN
2.5
48
80
19
19
D
T6
1
1
3
OUT
NOP
t OH
m
t HZ
-8
120,000
MAX
ACTIVE
T7
BANK
ROW
ROW
7
8
MOBILE SDRAM
1
©2003 Micron Technology, Inc. All rights reserved.
MIN
DON’T CARE
UNDEFINED
2.5
T8
50
66
20
20
NOP
1
1
3
64Mb: x16
-10
120,000
MAX
7
8
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns