AT26DF081A-SSU Atmel, AT26DF081A-SSU Datasheet - Page 39

IC FLASH 8MBIT 70MHZ 8SOIC

AT26DF081A-SSU

Manufacturer Part Number
AT26DF081A-SSU
Description
IC FLASH 8MBIT 70MHZ 8SOIC
Manufacturer
Atmel
Datasheet

Specifications of AT26DF081A-SSU

Format - Memory
FLASH
Memory Type
DataFLASH
Memory Size
8M (4096 pages x 256 bytes)
Speed
70MHz
Interface
SPI, 3-Wire Serial
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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16. Revision History
3600G–DFLASH–06/09
Revision Level – Release Date
A – November 2005
B – March 2006
C – April 2006
D – May 2006
E – January 2007
F – March 2007
G – June 2009
History
Initial Release
Added Global Protect and Global Unprotect Feature
Removed EPE bit from Status Register
Changed Note 5 of 8S2 package drawing to generalize terminal plating comment
Removed “Preliminary” designation.
Changed page and byte program specifications in
Added footnote (1) to t
Added EPE bit description to the Read Status Register section.
Reduced typical read currents in
Improved program and erase times in
Corrected 8S1 package drawing heading from EIAJ SOIC to JEDEC SOIC.
Updated to new template.
Corrected errors in datasheet missed when “Preliminary” designation was removed.
- Made various minor text changes throughout document
- Added Global Protect/Unprotect section to document
- Changed Write Status Register section
- Increased typical page program time from 1.5 ms to 3.0 ms
- Increased maximum page program time from 3.0 ms to 5.0 ms
- Increased typical byte program time from 6 µs to 12 µs
- Reduced typical page program time from 3.0 ms to 1.2 ms
- Reduced typical byte program time from 12 µs to 7 µs
- Reduced 32KB typical block erase time from 350 ms to 250 ms
- Reduced 64KB typical block erase time from 700 ms to 400 ms
- Reduced typical Chip Erase time from 10 sec to 6 sec
- Changed Deep Power-Down Current typical value from 10 µa to 25 µa
- Changed Deep Power-Down Current maximum value from 15 µa to 35 µa
CHPE
parameter in
Section
Section
Section 12.5
12.3.
12.5.
Section 12.5
39

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