UPD44646363AF5-E25-FQ1 Renesas Electronics America, UPD44646363AF5-E25-FQ1 Datasheet - Page 29

• Manufacturer Part Number: UPD44646363AF5-E25-FQ1
• Description: SRAM DDRII 72MBIT 165-PBGA
• Manufacturer: Renesas Electronics America

Specifications of UPD44646363AF5-E25-FQ1

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous, DDR II+
• Memory Size: 72M (2M x 36)
• Speed: 400MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Output Pin States of CQ, CQ#, QVLD and DQ
Remark
EXTEST
IDCODE
SAMPLE-Z
SAMPLE
BYPASS
Instructions
The output pin statuses during each instruction vary according
to the Control-Register status (value of Boundary Scan
Register, bit no. 109).
There are three statuses:
The Control-Register status is set during Update-DR at the
EXTEST or SAMPLE instruction.
Update : Contents of the “Update Register” are output to the
SRAM : Contents of the SRAM internal output “SRAM
High-Z : The output pin (DDR Pad) becomes high
μ
PD44646092A-A, 44646182A-A, 44646362A-A, 44646093A-A, 44646183A-A, 44646363A-A
output pin (DDR Pad).
Output” are output to the output pin (DDR Pad).
impedance by controlling of the “High-Z JTAG ctrl”.
Control-Register Status
0
1
0
1
0
1
0
1
0
1
Preliminary Data Sheet M19960EJ1V0DS
CQ, CQ#, QVLD
Update
Update
High-Z
High-Z
SRAM
SRAM
SRAM
SRAM
SRAM
SRAM
Output Pin Status
Update
High-Z
High-Z
High-Z
SRAM
SRAM
SRAM
SRAM
SRAM
SRAM
DQ
DDR
Pad
Boundary Scan
Register
High-Z
Update
CAPTURE
Register
Register
Update
JTAG ctrl
High-Z
Output
SRAM
Driver
SRAM
SRAM
Output
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