UPD44646363AF5-E25-FQ1 Renesas Electronics America, UPD44646363AF5-E25-FQ1 Datasheet - Page 13
UPD44646363AF5-E25-FQ1
Manufacturer Part Number
UPD44646363AF5-E25-FQ1
Description
SRAM DDRII 72MBIT 165-PBGA
Manufacturer
Renesas Electronics America
Datasheet
1.UPD44646183AF5-E25-FQ1.pdf
(40 pages)
Specifications of UPD44646363AF5-E25-FQ1
Format - Memory
RAM
Memory Type
SRAM - Synchronous, DDR II+
Memory Size
72M (2M x 36)
Speed
400MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
0°C ~ 70°C
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
UPD44646363AF5-E25-FQ1
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Company:
Part Number:
UPD44646363AF5-E25-FQ1-A
Manufacturer:
Renesas Electronics America
Quantity:
10 000
μ
PD44646092A-A, 44646182A-A, 44646362A-A, 44646093A-A, 44646183A-A, 44646363A-A
Bus Cycle State Diagram
LOAD NEW
ADDRESS
Count = 0
Load, Count = 2
Load, Count = 2
Write
Read
READ DOUBLE
WRITE DOUBLE
Count = Count + 2
Count = Count + 2
Load
NOP,
NOP,
Count = 2
Count = 2
NOP
NOP
Supply voltage provided
Power UP
Remarks 1. Bus cycle is terminated after burst count = 2.
2. State machine control timing sequence is controlled by K.
13
Preliminary Data Sheet M19960EJ1V0DS