M29DW323DB70N6E NUMONYX, M29DW323DB70N6E Datasheet - Page 22
![IC FLASH 32MBIT 70NS 48TSOP](/photos/7/28/72853/m29dw323db70n6_sml.jpg)
M29DW323DB70N6E
Manufacturer Part Number
M29DW323DB70N6E
Description
IC FLASH 32MBIT 70NS 48TSOP
Manufacturer
NUMONYX
Series
Axcell™r
Datasheet
1.M29DW323DT70ZE6F.pdf
(51 pages)
Specifications of M29DW323DB70N6E
Format - Memory
FLASH
Memory Type
FLASH - Nor
Memory Size
32M (4Mx8, 2Mx16)
Speed
70ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Supply Voltage Range
2.7V To 3.6V
Memory Case Style
TSOP
No. Of Pins
48
Operating Temperature Range
-40°C To +85°C
Access Time
70ns
Memory Configuration
4M X 8, 2M X 16
Interface Type
CFI, Parallel
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
M29DW323DB70N6E
Manufacturer:
VISHAY
Quantity:
6 700
Part Number:
M29DW323DB70N6E
Manufacturer:
ST
Quantity:
20 000
M29DW323DT, M29DW323DB
DUAL OPERATIONS AND MULTIPLE BANK ARCHITECTURE
The
M29DW323DT and M29DW323DB gives greater
flexibility for software developers to split the code
and data spaces within the memory array. The
Dual Operations feature simplifies the software
management of the device by allowing code to be
executed from one bank while the other bank is
being programmed or erased.
The Dual Operations feature means that while pro-
gramming or erasing in one bank, read operations
are possible in the other bank with zero latency.
Only one bank at a time is allowed to be in pro-
gram or erase mode.
Table 9. Dual Operations Allowed In the Other Bank
Note: 1. If one bank is involved in a program or erase operation, then the other bank is available for dual operations.
Table 10. Dual Operations Allowed In Same Bank
Note: 1. Not allowed in the Block or Word that is being erased or programmed.
22/51
Idle
Programming
Erasing
Erase Suspended
Idle
Programming
Erasing
Erase Suspended
Status of First
Status of bank
2. Only after an Erase operation in that bank.
3. Only after an Erase Suspend command in that bank.
2. Only after an Erase operation in that bank.
3. Only after an Erase Suspend command in that bank.
4. Read Status Register is not a command. The Status Register can be read during a block program or erase operation.
5. The Status Register can be read by addressing the block being erase suspended.
Bank
Multiple
(1)
Bank
Array
Read
Array
Yes
Read
Yes
Yes
Yes
Yes
Yes
No
No
Architecture
(1)
Read Status
Register
Register
Status
Yes
Read
Yes
Yes
Yes
Yes
Yes
No
No
Commands allowed in same bank
(5)
(2)
(4)
(6)
of
Commands allowed in the Other Bank
CFI Query
Query
Read
Read
the
Yes
Yes
CFI
Yes
Yes
No
No
No
No
If a read operation is required in a bank, which is
programming or erasing, the program or erase op-
eration can be suspended.
Also if the suspended operation was erase then a
program command can be issued to another
block, so the device can have one block in Erase
Suspend mode, one programming and other
banks in read mode.
By using a combination of these features, read op-
erations are possible at any moment.
Table 9.
possible in other banks and in the same bank.
Note that only the commonly used commands are
represented in these tables.
Select
Auto
Select
Yes
Yes
Auto
No
No
Yes
Yes
No
No
and
Program
Program
Yes
Yes
–
–
Table 10.
Yes
Yes
(1)
–
–
Erase
Erase
Yes
No
No
Yes
–
No
show the dual operations
–
–
(1)
Suspend
Suspend
Erase
Yes
Yes
Erase
Yes
No
No
No
-
-
(2)
(5)
(2)
Resume
Resume
Erase
Yes
Yes
Erase
Yes
Yes
No
No
-
-
(3)
(4)
(3)