M29DW323DB70N6E NUMONYX, M29DW323DB70N6E Datasheet

IC FLASH 32MBIT 70NS 48TSOP

M29DW323DB70N6E

Manufacturer Part Number
M29DW323DB70N6E
Description
IC FLASH 32MBIT 70NS 48TSOP
Manufacturer
NUMONYX
Series
Axcell™r
Datasheet

Specifications of M29DW323DB70N6E

Format - Memory
FLASH
Memory Type
FLASH - Nor
Memory Size
32M (4Mx8, 2Mx16)
Speed
70ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Supply Voltage Range
2.7V To 3.6V
Memory Case Style
TSOP
No. Of Pins
48
Operating Temperature Range
-40°C To +85°C
Access Time
70ns
Memory Configuration
4M X 8, 2M X 16
Interface Type
CFI, Parallel
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

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Part Number
Manufacturer
Quantity
Price
Part Number:
M29DW323DB70N6E
Manufacturer:
VISHAY
Quantity:
6 700
Part Number:
M29DW323DB70N6E
Manufacturer:
ST
Quantity:
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Part Number:
M29DW323DB70N6E
Manufacturer:
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0
Part Number:
M29DW323DB70N6E
Manufacturer:
ST
Quantity:
20 000
FEATURES SUMMARY
March 2010
SUPPLY VOLTAGE
ACCESS TIME: 70ns
PROGRAMMING TIME
MEMORY BLOCKS
DUAL OPERATIONS
ERASE SUSPEND and RESUME MODES
UNLOCK BYPASS PROGRAM COMMAND
V
WRITE PROTECT
TEMPORARY BLOCK UNPROTECTION
MODE
COMMON FLASH INTERFACE
EXTENDED MEMORY BLOCK
LOW POWER CONSUMPTION
100,000 PROGRAM/ERASE CYCLES per
BLOCK
ELECTRONIC SIGNATURE
Automotive Certified Parts Available
PP
/WP PIN for FAST PROGRAM and
V
and Read
V
10µs per Byte/Word typical
Double Word/ Quadruple Byte Program
Dual Bank Memory Array: 8Mbit+24Mbit
Parameter Blocks (Top or Bottom
Location)
Read in one bank while Program or Erase
in other
Read and Program another Block during
Erase Suspend
Faster Production/Batch Programming
64 bit Security Code
Extra block used as security block or to
store additional information
Standby and Automatic Standby
Manufacturer Code: 0020h
Top Device Code M29DW323DT: 225Eh
Bottom Device Code M29DW323DB:
225Fh
CC
PP
32 Mbit (4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block)
=12V for Fast Program (optional)
= 2.7V to 3.6V for Program, Erase
Figure 1. APackages
3V Supply Flash Memory
M29DW323DB
TFBGA48 (ZE)
M29DW323DT
TSOP48 (N)
12 x 20mm
6 x 8mm
FBGA
1/51

Related parts for M29DW323DB70N6E

M29DW323DB70N6E Summary of contents

Page 1

... ACCESS TIME: 70ns PROGRAMMING TIME – 10µs per Byte/Word typical – Double Word/ Quadruple Byte Program MEMORY BLOCKS – Dual Bank Memory Array: 8Mbit+24Mbit – Parameter Blocks (Top or Bottom Location) DUAL OPERATIONS – Read in one bank while Program or Erase in other ERASE SUSPEND and RESUME MODES – ...

Page 2

M29DW323DT, M29DW323DB TABLE OF CONTENTS FEATURES SUMMARY . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 3

Read CFI Query Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 4

... Table 27. CFI Query System Interface Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41 Table 28. Device Geometry Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41 Table 29. Primary Algorithm-Specific Extended Query Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42 Table 30. Security Code Area . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42 APPENDIX C.EXTENDED MEMORY BLOCK . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43 Factory Locked Extended Block . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43 Customer Lockable Extended Block . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43 Table 31. Extended Block Address and Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43 APPENDIX D.BLOCK PROTECTION Programmer Technique ...

Page 5

Table 33. Document Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 6

... Command Interface of the memory. An on-chip Program/Erase Controller simplifies the process of programming or erasing the memory by taking care of all of the special op- erations that are required to update the memory contents. The end of a program or erase operation can be detected and any error conditions identi- fied ...

Page 7

Figure 3. TSOP Connections V PP /WP A15 1 48 A14 A13 A12 A11 A10 A9 A8 A19 M29DW323DT A20 M29DW323DB A18 A17 ...

Page 8

M29DW323DT, M29DW323DB Figure 4. TFBGA48 Connections (Top view through package Table 2. Bank Architecture Bank Bank Size A 8 Mbit B 24 Mbit 8/ ...

Page 9

Figure 5. Block Addresses (x8) Top Boot Block (x8) Address lines A20-A0, DQ15A-1 000000h 64 KByte or 32 KWord 00FFFFh Bank B 2F0000h 64 KByte or 32 KWord 2FFFFFh 300000h 64 KByte or 32 KWord 30FFFFh 3E0000h 64 KByte or ...

Page 10

M29DW323DT, M29DW323DB Figure 6. Block Addresses (x16) Top Boot Block (x16) Address lines A20-A0 000000h 64 KByte or 32 KWord 007FFFh Bank B 178000h 64 KByte or 32 KWord 17FFFFh 180000h 64 KByte or 32 KWord 187FFFh 1F0000h 64 KByte ...

Page 11

... Unlock Bypass Program, I Reset/Block Temporary Unprotect (RP). The Reset/Block Temporary Unprotect pin can be used to apply a Hardware Reset to the memory or to temporarily unprotect all Blocks that have been protected. Note that if V most boot blocks will remain protected even if RP ...

Page 12

... Byte/Word Organization Select (BYTE). The Byte/Word Organization Select pin is used to switch between the x8 and x16 Bus modes of the memory. When Byte/Word Organization Select is Low the memory mode, when High the memory is in x16 mode. IH 12/51 V Supply Voltage (2 ...

Page 13

... They require V Electronic Signature. The memory has two codes, the manufacturer code and the device code, that can be read to identify the memory. These codes can be read by applying the signals listed in Tables Block Protect and Chip Unprotect. Groups blocks can be protected against accidental Pro- gram or Erase ...

Page 14

... IH Table 4. Bus Operations, BYTE = V Operation E V Bus Read IL V Bus Write IL Output Disable X Standby V IH Read Manufacturer V IL Code Read Device Code V IL Extended Memory V IL Block Verify Code Note 14/51 IL Address Inputs G W DQ15A–1, A0-A20 V V Cell Address Command Address ...

Page 15

... Common Flash Interface (CFI) memory area. Program Command The Program command can be used to program a value to one address in the memory array at a time. The command requires four Bus Write oper- ations, the final write operation latches the ad- dress and data, and starts the Program/Erase Controller ...

Page 16

... Unlock Bypass Reset command to return the bank to Read mode. In Unlock Bypass mode the memory can be read Read mode. When V the memory automatically enters the Unlock By- pass mode and the Unlock Bypass Program com- Table mand can be issued immediately ...

Page 17

... Erase Controller has stopped the memory will be set to Read mode and the Erase will be suspend- ed. If the Erase Suspend command is issued dur- ing the period when the memory is waiting for an additional block (before the Program/Erase Con- troller starts) then the Erase is suspended immedi- ately and will start immediately when the Erase Resume Command is issued ...

Page 18

M29DW323DT, M29DW323DB Erase Resume Command The Erase Resume command must be used to re- start the Program/Erase Controller after an Erase Suspend. The device must be in Read Array mode before the Resume command will be accepted. An erase can ...

Page 19

Table 6. Commands, 8-bit mode, BYTE = V Command Add 1 Read/Reset 3 AAA Auto Select 3 AAA Program 4 AAA Quadruple Byte Program 5 AAA Unlock Bypass 3 AAA Unlock Bypass Program 2 Unlock Bypass Reset 2 Chip Erase ...

Page 20

... One of the Erase commands must be used to set all the bits in a block or in the whole memory from ’0’ to ’1’. Erase Timer Bit (DQ3). The Erase Timer Bit can be used to identify the start of Program/Erase Controller operation during a Block Erase com- mand ...

Page 21

Table 8. Status Register Bits Operation Program Bank Address Program During Erase Bank Address Suspend Program Error Bank Address Chip Erase Any Address Erasing Block Block Erase before timeout Non-Erasing Block Erasing Block Block Erase Non-Erasing Block Erasing Block Erase ...

Page 22

... Architecture M29DW323DT and M29DW323DB gives greater flexibility for software developers to split the code and data spaces within the memory array. The Dual Operations feature simplifies the software management of the device by allowing code to be executed from one bank while the other bank is being programmed or erased ...

Page 23

... PP stress ratings only and operation of the device at these or any other conditions above those indicat the Operating sections of this specification is not implied. Refer also to the Numonyx SURE Pro- gram and other relevant quality documents. Parameter (2,3) +2V during transition and for less than 20ns during transitions. ...

Page 24

M29DW323DT, M29DW323DB DC AND AC PARAMETERS This section summarizes the operating measure- ment conditions, and the DC and AC characteris- tics of the device. The parameters in the DC and AC characteristics Tables that follow, are derived from tests performed ...

Page 25

Table 14. DC Characteristics Symbol Parameter I Input Leakage Current LI I Output Leakage Current LO (2) Supply Current (Read) I CC1 I Supply Current (Standby) CC2 Supply Current (Program/ (1,2) I CC3 Erase) V Input Low Voltage IL V ...

Page 26

M29DW323DT, M29DW323DB Figure 11. Read Mode AC Waveforms A0-A20/ A– DQ0-DQ7/ DQ8-DQ15 BYTE tELBL/tELBH Table 15. Read AC Characteristics Symbol Alt t t Address Valid to Next Address Valid AVAV Address Valid to Output Valid ...

Page 27

Figure 12. Write AC Waveforms, Write Enable Controlled A0-A20/ A– DQ0-DQ7/ DQ8-DQ15 V CC tVCHEL RB Table 16. Write AC Characteristics, Write Enable Controlled Symbol Alt t t Address Valid to Next Address Valid AVAV WC t ...

Page 28

M29DW323DT, M29DW323DB Figure 13. Write AC Waveforms, Chip Enable Controlled A0-A20/ A– DQ0-DQ7/ DQ8-DQ15 V CC tVCHWL RB Table 17. Write AC Characteristics, Chip Enable Controlled Symbol Alt t t Address Valid to Next Address Valid AVAV ...

Page 29

Figure 14. Toggle and Alternative Toggle Bits Mechanism, Chip Enable Controlled Address Outside the Bank A0-A20 Being Programmed or Erased E G Data (1) (2) DQ2 /DQ6 Read Operation outside the Bank Being Programmed or Erased Note: 1. The Toggle ...

Page 30

M29DW323DT, M29DW323DB Figure 16. Reset/Block Temporary Unprotect AC Waveforms tPLPX RP Table 19. Reset/Block Temporary Unprotect AC Characteristics Symbol Alt (1) t PHWL RP High to Write Enable Low, Chip Enable Low PHEL RH ...

Page 31

PACKAGE MECHANICAL Figure 18. TSOP48 Lead Plastic Thin Small Outline, 12x20 mm, Bottom View Package Outline DIE Note: Drawing not to scale. Table 20. TSOP48 Lead Plastic Thin Small Outline, 12x20 mm, Package Mechanical Data ...

Page 32

M29DW323DT, M29DW323DB Figure 19. TFBGA48 6x8mm - 6x8 Ball Array, 0.8mm Pitch, Bottom View Package Outline FD FE BALL "A1" Note: Drawing not to scale. Table 21. TFBGA48 6x8mm - 6x8 Ball Array, 0.8mm Pitch, Package Mechanical Data ...

Page 33

... Numonyx sales office. Devices are shipped from the factory with the memory content bits erased to ’1’. For a list of available options (Speed, Package, etc.) or for further information on any aspect of this device, please contact the Numonyx Sales Office nearest to you. M29DW323DT, M29DW323DB M29DW323DB ...

Page 34

M29DW323DT, M29DW323DB APPENDIX A. BLOCK ADDRESSES Table 23. Top Boot Block Addresses, M29DW323DT (Kbytes/ Block Kwords) 0 64/32 1 64/32 2 64/32 3 64/32 4 64/32 5 64/32 6 64/32 7 64/32 8 64/32 9 64/32 10 64/32 11 64/32 ...

Page 35

Protection Block Block Kwords) Group 32 64/32 33 64/32 Protection Group 34 64/32 35 64/32 36 64/32 37 64/32 Protection Group 38 64/32 39 64/32 40 64/32 41 64/32 Protection Group 42 64/32 43 64/32 44 64/32 45 64/32 ...

Page 36

M29DW323DT, M29DW323DB (Kbytes/ Block Kwords) 63 8/4 64 8/4 65 8/4 66 8/4 67 8/4 68 8/4 69 8/4 70 8/4 Note: 1. Used as the Extended Block Addresses in Extended Block mode. 36/51 Protection Block (x8) Group Protection Group ...

Page 37

Table 24. Bottom Boot Block Addresses, M29DW323DB (Kbytes/ Block Kwords) 0 8/4 1 8/4 2 8/4 3 8/4 4 8/4 5 8/4 6 8/4 7 8/4 8 64/32 9 64/32 10 64/32 11 64/32 12 64/32 13 64/32 14 64/32 ...

Page 38

M29DW323DT, M29DW323DB (Kbytes/ Block Kwords) 31 64/32 32 64/32 33 64/32 34 64/32 35 64/32 36 64/32 37 64/32 38 64/32 39 64/32 40 64/32 41 64/32 42 64/32 43 64/32 44 64/32 45 64/32 46 64/32 47 64/32 48 ...

Page 39

Block Kwords) 63 64/32 64 64/32 65 64/32 66 64/32 67 64/32 68 64/32 69 64/32 70 64/32 Note: 1. Used as the Extended Block Addresses in Extended Block mode. Protection Block (x8) Group 380000h-38FFFFh 390000h-39FFFFh Protection Group 3A0000h-3AFFFFh ...

Page 40

... Read mode by the final user impossible to change the security num- ber after it has been written by Numonyx. Sub-section Name Description Query Unique ASCII String "QRY" Primary Algorithm Command Set and Control Interface ID code 16 bit ...

Page 41

Table 27. CFI Query System Interface Information Address Data x16 x8 1Bh 36h 0027h 1Ch 38h 0036h 1Dh 3Ah 00B5h 1Eh 3Ch 00C5h 1Fh 3Eh 0004h 20h 40h 0000h 21h 42h 000Ah 22h 44h 0000h 23h 46h 0004h 24h 48h ...

Page 42

M29DW323DT, M29DW323DB Table 29. Primary Algorithm-Specific Extended Query Table Address Data x16 x8 40h 80h 0050h 41h 82h 0052h 42h 84h 0049h 43h 86h 0031h 44h 88h 0030h 45h 8Ah 0000h 46h 8Ch 0002h 47h 8Eh 0001h 48h 90h 0001h ...

Page 43

... Bit DQ7 is the most significant bit in the Extended Block Verify Code and a specific procedure must be followed to read it. See “Extended Memory Block Verify Code Tables 3 ” in tions, BYTE = VIL ...

Page 44

... Reset/Blocks Temporary Unprotect pin, RP the maximum ratings of the components on the mi- croprocessor bus, therefore this technique is suit- able for use after the memory has been fitted to the system. To protect a group of blocks follow the flowchart in Figure 22., In-System Equipment Group Protect ) volt- Flowchart ...

Page 45

Figure 20. Programmer Equipment Group Protect Flowchart Note: Block Protection Groups are shown in START ADDRESS = GROUP ADDRESS Wait 4µ ...

Page 46

M29DW323DT, M29DW323DB Figure 21. Programmer Equipment Chip Unprotect Flowchart NO = 1000 Note: Block Protection Groups are shown in 46/51 START PROTECT ALL GROUPS CURRENT GROUP = 0 ...

Page 47

Figure 22. In-System Equipment Group Protect Flowchart Note: 1. Block Protection Groups are shown can be either START WRITE 60h ADDRESS = GROUP ADDRESS ...

Page 48

M29DW323DT, M29DW323DB Figure 23. In-System Equipment Chip Unprotect Flowchart ISSUE READ/RESET COMMAND Note: Block Protection Groups are shown in 48/51 START PROTECT ALL GROUPS CURRENT GROUP = ...

Page 49

... Endurance APPENDIX C., EXTENDED MEMORY read the Extended Memory Block. Extended Memory Block Verify Code row added to Tables Address modified in Status Register 22., Ordering Information Table 20., TSOP48 Lead Plastic Thin Small Outline, 12x20 mm, Package Mechanical 07-May-2003 6 ...

Page 50

... Status of Ready/Busy signal for Program Error, Chip Erase and Block Erase modified in 10-Dec-2004 12.0 Table 8., Status Register RB updated in 14-Mar-2005 13.0 Fast Program Commands Unlock Bypass Command 27-Mar-2008 14.0 Applied Numonyx branding. Added the following: – 1-March-2010 15.0 – 50/51 Revision Details minimum value updated in Table 12., Operating and AC Measurement Conditions. ...

Page 51

... NUMONYX PRODUCTS INCLUDING LIABILITY OR WARRANTIES RELATING TO FITNESS FOR A PARTICULAR PURPOSE, MERCHANTABILITY, OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. Numonyx products are not intended for use in medical, life saving, life sustaining, critical control or safety systems nuclear facility Numonyx may make changes to specifications and product descriptions at any time, without notice. ...

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