M29DW323DB70N6E NUMONYX, M29DW323DB70N6E Datasheet - Page 19
![IC FLASH 32MBIT 70NS 48TSOP](/photos/7/28/72853/m29dw323db70n6_sml.jpg)
M29DW323DB70N6E
Manufacturer Part Number
M29DW323DB70N6E
Description
IC FLASH 32MBIT 70NS 48TSOP
Manufacturer
NUMONYX
Series
Axcell™r
Datasheet
1.M29DW323DT70ZE6F.pdf
(51 pages)
Specifications of M29DW323DB70N6E
Format - Memory
FLASH
Memory Type
FLASH - Nor
Memory Size
32M (4Mx8, 2Mx16)
Speed
70ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Supply Voltage Range
2.7V To 3.6V
Memory Case Style
TSOP
No. Of Pins
48
Operating Temperature Range
-40°C To +85°C
Access Time
70ns
Memory Configuration
4M X 8, 2M X 16
Interface Type
CFI, Parallel
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
M29DW323DB70N6E
Manufacturer:
VISHAY
Quantity:
6 700
Part Number:
M29DW323DB70N6E
Manufacturer:
ST
Quantity:
20 000
Table 6. Commands, 8-bit mode, BYTE = V
Note: X Don’t Care, PA Program Address, PD Program Data, BA Any address in the Block. All values in the table are in hexadecimal.
Table 7. Program, Erase Times and Program, Erase Endurance Cycles
Note: 1. Typical values measured at room temperature and nominal voltages.
Read/Reset
Auto Select
Program
Quadruple Byte Program
Unlock Bypass
Unlock Bypass Program
Unlock Bypass Reset
Chip Erase
Block Erase
Erase Suspend
Erase Resume
Read CFI Query
Enter Extended Block
Exit Extended Block
Chip Erase
Block Erase (64 KBytes)
Erase Suspend Latency Time
Program (Byte or Word)
Double Word Program (Byte or Word)
Chip Program (Byte by Byte)
Chip Program (Word by Word)
Chip Program (Quadruple Byte or Double Word)
Program/Erase Cycles (per Block)
Data Retention
The Command Interface only uses A–1, A0-A10 and DQ0-DQ7 to verify the commands; A11-A20, DQ8-DQ14 and DQ15 are Don’t
Care. DQ15A–1 is A–1 when BYTE is V
2. Sampled, but not 100% tested.
3. Maximum value measured at worst case conditions for both temperature and V
4. Maximum value measured at worst case conditions for both temperature and V
Command
Parameter
6+
1
3
3
4
5
3
2
2
6
1
1
1
3
4
AAA
AAA
BKA
AAA
Add
AAA
AAA
AAA
AAA
AAA
BKA
AAA
AA
X
X
X
1st
IL
Data
AA
AA
AA
AA
AA
AA
AA
A0
AA
B0
F0
55
90
30
98
or DQ15 when BYTE is V
Add
PA0
555
555
555
555
555
555
555
555
PA
X
IL
2nd
Data
PD0
PD
55
55
55
55
00
55
55
55
55
(BKA)
AAA
AAA
AAA
AAA
AAA
AAA
AAA
Add
IH
PA1
Bus Write Operations
X
.
3rd
100,000
Min
20
Data
PD1
F0
90
A0
20
80
88
90
80
CC
CC
.
Add
AAA
AAA
after 100,00 program/erase cycles.
M29DW323DT, M29DW323DB
PA2
PA
X
Typ
4th
0.8
40
10
10
40
20
10
Data
PD2
(1, 2)
PD
AA
AA
00
Add Data Add Data
PA3
555
555
Max
5th
200
200
200
200
100
100
50
6
(3)
PD3
(4)
(3)
(4)
(3)
(3)
(3)
(3)
55
55
(2)
AAA
BA
cycles
years
6th
Unit
µs
µs
µs
s
s
s
s
s
19/51
10
30