N25Q128A13BF840F NUMONYX, N25Q128A13BF840F Datasheet - Page 128

• Manufacturer Part Number: N25Q128A13BF840F
• Description: IC SRL FLASH 128MB NMX 8-VDFPN
• Manufacturer: NUMONYX
• Series: Forté™r

Specifications of N25Q128A13BF840F

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 128M (16M x 8)
• Speed: 108MHz
• Interface: SPI, 3-Wire Serial
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Instructions
9.3.24
9.3.25
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DQ0
DQ3
DQ1
DQ2
S
C
Read Volatile Enhanced Configuration Register
The Read Volatile Enhanced Configuration Register (RDVECR) instruction allows the
Volatile Configuration Register to be read.
Figure 99. Read Volatile Enhanced Configuration Register instruction sequence
Write Volatile Enhanced Configuration Register
The Write Volatile Enhanced Configuration register (WRVECR) instruction allows new
values to be written to the Volatile Enhanced Configuration register. Before it can be
accepted, a write enable (WREN) instruction must previously have been executed.
Except for the parallelizing of the instruction code and the input data on the four pins DQ0,
DQ1, DQ2 and DQ3, the instruction functionality is exactly the same as the Write Volatile
Enhanced Configuration Register (WRVECR) instruction of the Extended SPI protocol.
Instruction
QIO-SPI
0
1
2
5
4
6
7
3
1
0
2
3
4
5
4
6
7
5
1
0
2
3
Configuration Register Out
6
5
4
6
7
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Volatile Enhanced
7
1
0
2
3
8
5
4
6
7
9 10 11 12 13 14 15
1
0
3
2
5
4
7
6
1
0
3
2
4
5
7
6
©2010 Micron Technology, Inc. All rights reserved.
0
1
3
2
4
5
7
6
0
1
3
2
N25Q128 - 3 V