M25P40-VMN3TPB NUMONYX, M25P40-VMN3TPB Datasheet - Page 6

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M25P40-VMN3TPB

Manufacturer Part Number
M25P40-VMN3TPB
Description
IC SRL FLASH 4MBIT 3V 75MHZ S08N
Manufacturer
NUMONYX
Series
Forté™r
Datasheet

Specifications of M25P40-VMN3TPB

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
4M (512K x 8)
Speed
75MHz
Interface
SPI, 3-Wire Serial
Voltage - Supply
2.3 V ~ 3.6 V
Operating Temperature
-40°C ~ 125°C
Package / Case
8-SOIC (3.9mm Width)
Cell Type
NOR
Density
4Mb
Access Time (max)
15ns
Interface Type
Serial (SPI)
Address Bus
1b
Operating Supply Voltage (typ)
2.5/3.3V
Operating Temp Range
-40C to 125C
Package Type
SO N
Program/erase Volt (typ)
2.3 to 3.6V
Sync/async
Synchronous
Operating Temperature Classification
Automotive
Operating Supply Voltage (min)
2.3V
Operating Supply Voltage (max)
3.6V
Word Size
8b
Number Of Words
512K
Supply Current
8mA
Mounting
Surface Mount
Pin Count
8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M25P40-VMN3TPB
Manufacturer:
MICRON
Quantity:
5 600
Company:
Part Number:
M25P40-VMN3TPB
Quantity:
360
1
Important:
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Description
The M25P40 is a 4 Mbit (512 K × 8) Serial Flash memory, with advanced write protection
mechanisms, accessed by a high speed SPI-compatible bus. The M25P40 features high
performance instructions allowing clock frequency up to 75 MHz.
The memory can be programmed 1 to 256 bytes at a time, using the Page Program
instruction.
The memory is organized as 8 sectors, each containing 256 pages. Each page is 256 bytes
wide. Thus, the whole memory can be viewed as consisting of 2048 pages, or 524,288
bytes.
The whole memory can be erased using the Bulk Erase instruction, or a sector at a time,
using the Sector Erase instruction.
In order to meet environmental requirements, Numonyx offers the M25P40 in RoHS
compliant packages, which are Lead-free. RoHS specifications are available at:
www.Numonyx.com.
This datasheet details the functionality of the M25P40 devices, based on the previous 150
nm process or based on the current 110 nm process (available since August 2008). The
new device in the 110 nm process has the following additional features and is completely
backward compatible with the old one in 150 nm:
-
-
Figure 1.
1. 75 MHz operation is available only on the VCC range 2.7 V - 3.6 V and for 110 nm process technology devices,
identified by process identification digit "4" in the device marking and process letter "B" in the part number.
improved max frequency (Fast Read) to 75 MHz in the standard Vcc range 2.7 V to
3.6 V, while the max frequency (Fast Read) in the extended Vcc range 2.3 V to 2.7 V is
40 MHz
UID/CFD protection feature
Logic diagram
HOLD
W
D
C
S
V CC
V SS
M25P40
Q
AI04090
(1)

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