M25P40-VMN3TPB NUMONYX, M25P40-VMN3TPB Datasheet - Page 36

• Manufacturer Part Number: M25P40-VMN3TPB
• Description: IC SRL FLASH 4MBIT 3V 75MHZ S08N
• Manufacturer: NUMONYX
• Series: Forté™r

Specifications of M25P40-VMN3TPB

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 4M (512K x 8)
• Speed: 75MHz
• Interface: SPI, 3-Wire Serial
• Voltage - Supply: 2.3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 125°C
• Package / Case: 8-SOIC (3.9mm Width)
• Cell Type: NOR
• Density: 4Mb
• Access Time (max): 15ns
• Interface Type: Serial (SPI)
• Address Bus: 1b
• Operating Supply Voltage (typ): 2.5/3.3V
• Operating Temp Range: -40C to 125C
• Package Type: SO N
• Program/erase Volt (typ): 2.3 to 3.6V
• Sync/async: Synchronous
• Operating Temperature Classification: Automotive
• Operating Supply Voltage (min): 2.3V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 512K
• Supply Current: 8mA
• Mounting: Surface Mount
• Pin Count: 8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Figure 20. Power-up timing
Table 8.
1. These parameters are characterized only.
V CC (max)
Symbol
V CC (min)
t
t
V
PUW
VSL
WI
V WI
(1)
(1)
(1)
V CC
V
Time delay to Write instruction
Write Inhibit voltage (device grade 6)
Write Inhibit voltage (device grade 3)
Power-up timing and V
Reset State
CC
Device
of the
(min) to S low
Program, Erase and Write Commands are Rejected by the Device
Chip Selection Not Allowed
Parameter
WI
threshold
tPUW
tVSL
Read Access allowed
Min.
10
1
1
1
Device fully
accessible
Max.
AI04009C
2.1
2.1
10
—
time
Unit
ms
µs
V
V