M25P40-VMN3TPB NUMONYX, M25P40-VMN3TPB Datasheet - Page 16

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M25P40-VMN3TPB

Manufacturer Part Number
M25P40-VMN3TPB
Description
IC SRL FLASH 4MBIT 3V 75MHZ S08N
Manufacturer
NUMONYX
Series
Forté™r
Datasheet

Specifications of M25P40-VMN3TPB

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
4M (512K x 8)
Speed
75MHz
Interface
SPI, 3-Wire Serial
Voltage - Supply
2.3 V ~ 3.6 V
Operating Temperature
-40°C ~ 125°C
Package / Case
8-SOIC (3.9mm Width)
Cell Type
NOR
Density
4Mb
Access Time (max)
15ns
Interface Type
Serial (SPI)
Address Bus
1b
Operating Supply Voltage (typ)
2.5/3.3V
Operating Temp Range
-40C to 125C
Package Type
SO N
Program/erase Volt (typ)
2.3 to 3.6V
Sync/async
Synchronous
Operating Temperature Classification
Automotive
Operating Supply Voltage (min)
2.3V
Operating Supply Voltage (max)
3.6V
Word Size
8b
Number Of Words
512K
Supply Current
8mA
Mounting
Surface Mount
Pin Count
8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M25P40-VMN3TPB
Manufacturer:
MICRON
Quantity:
5 600
Company:
Part Number:
M25P40-VMN3TPB
Quantity:
360
5
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Memory organization
The memory is organized as:
Each page can be individually programmed (bits are programmed from 1 to 0). The device is
Sector or Bulk Erasable (bits are erased from 0 to 1) but not Page Erasable.
Table 3.
524,288 bytes (8 bits each)
8 sectors (512 Kbits, 65,536 bytes each)
2048 pages (256 bytes each)
Sector
7
6
5
4
3
2
1
0
Memory organization
70000h
60000h
50000h
40000h
30000h
20000h
10000h
00000h
Address range
7FFFFh
6FFFFh
5FFFFh
4FFFFh
3FFFFh
2FFFFh
1FFFFh
0FFFFh

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