M25PE16-VMW6TG NUMONYX, M25PE16-VMW6TG Datasheet - Page 41

IC FLASH 16MBIT 75MHZ 8SOIC

M25PE16-VMW6TG

Manufacturer Part Number
M25PE16-VMW6TG
Description
IC FLASH 16MBIT 75MHZ 8SOIC
Manufacturer
NUMONYX
Series
Forté™r
Datasheet

Specifications of M25PE16-VMW6TG

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
16M (2M x 8)
Speed
75MHz
Interface
SPI, 3-Wire Serial
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-SOIC (5.3mm Width), 8-SOP, 8-SOEIAJ
Package
8SOIC W
Cell Type
NOR
Density
16 Mb
Architecture
Sectored
Block Organization
Symmetrical
Typical Operating Supply Voltage
3.3 V
Sector Size
64KByte x 32
Timing Type
Synchronous
Interface Type
Serial-SPI
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
M25PE16-VMW6TGTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M25PE16-VMW6TG
Manufacturer:
MAXIM
Quantity:
14 500
Part Number:
M25PE16-VMW6TG
Manufacturer:
Numonyx
Quantity:
15 000
Part Number:
M25PE16-VMW6TG
Manufacturer:
ST
Quantity:
20 000
Part Number:
M25PE16-VMW6TG
0
Company:
Part Number:
M25PE16-VMW6TG
Quantity:
6 000
M25PE16
6.16
Deep power-down (DP)
Executing the deep power-down (DP) instruction is the only way to put the device in the
lowest consumption mode (the deep power-down mode). It can also be used as an extra
software protection mechanism, while the device is not in active use, since in this mode, the
device ignores all write, program and erase instructions.
Driving Chip Select (S) High deselects the device, and puts the device in the standby mode
(if there is no internal cycle currently in progress). But this mode is not the deep power-down
mode. The deep power-down mode can only be entered by executing the deep power-down
(DP) instruction, subsequently reducing the standby current (from I
in
Once the device has entered the deep power-down mode, all instructions are ignored
except the release from deep power-down (RDP) instruction. Issuing the release from deep
power-down (RDP) instruction will cause the device to exit the deep power-down mode.
The deep power-down mode automatically stops at power-down, and the device always
powers-up in the standby mode.
The deep power-down (DP) instruction is entered by driving Chip Select (S) Low, followed
by the instruction code on serial data input (D). Chip Select (S) must be driven Low for the
entire duration of the sequence.
The instruction sequence is shown in
Chip Select (S) must be driven High after the eighth bit of the instruction code has been
latched in, otherwise the deep power-down (DP) instruction is not executed. As soon as
Chip Select (S) is driven High, it requires a delay of t
to I
Any deep power-down (DP) instruction, while an erase, program or write cycle is in
progress, is rejected without having any effects on the cycle that is in progress.
Figure 21. Deep power-down (DP) instruction sequence
S
C
D
Table
CC2
and the deep power-down mode is entered.
17).
0
1
2
Instruction
3
4
5
6
Figure
7
21.
DP
t
Standby mode
DP
before the supply current is reduced
CC1
Deep power-down mode
to I
CC2
, as specified
Instructions
AI03753D
41/58

Related parts for M25PE16-VMW6TG