PESD12VS2UQ T/R NXP Semiconductors, PESD12VS2UQ T/R Datasheet - Page 6

• Manufacturer Part Number: PESD12VS2UQ T/R
• Description: TVS Diode Arrays DIODE ARRAY ESD TAPE-7
• Manufacturer: NXP Semiconductors
• Series: PESDxS2UQr

Specifications of PESD12VS2UQ T/R

• Product Category: TVS Diode Arrays
• Rohs: yes
• Polarity: Unidirectional
• Channels: 2 Channels
• Breakdown Voltage: 14.7 V
• Clamping Voltage: 35 V
• Operating Voltage: 12 V
• Peak Surge Current: 5 A
• Mounting Style: SMD/SMT
• Termination Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Maximum Operating Temperature: + 150 C
• Dimensions: 1.3 (Max) mm W x 1.7 (Max) mm L
• Package / Case: SOT-663
• Peak Pulse Power Dissipation: 150 W
• Factory Pack Quantity: 4000
• Part # Aliases: PESD12VS2UQ,115

NXP Semiconductors
PESDXS2UQ_SER_4
Product data sheet
Fig 3.
Fig 5.
P
(pF)
(W)
C
(1) PESD3V3S2UQ; V
(2) PESD5V0S2UQ; V
PP
240
200
160
120
10
10
10
d
10
80
40
4
3
2
1
T
Peak pulse power dissipation as a function of
pulse duration; typical values
0
f = 1 MHz; T
voltage; typical values
Diode capacitance as a function of reverse
amb
= 25 °C
1
(2)
(1)
amb
10
= 25 °C
2
RWM
RWM
= 3.3 V
= 5 V
3
10
2
t
p
4
001aaa726
001aaa727
(μs)
V
R
(V)
Rev. 04 — 26 January 2010
10
5
3
Fig 4.
Fig 6.
Double ESD protection diodes in SOT663 package
P
PP(25°C)
P
(pF)
C
PP
(1) PESD12VS2UQ; V
(2) PESD15VS2UQ; V
(3) PESD24VS2UQ; V
d
1.2
0.8
0.4
50
40
30
20
10
0
0
0
0
Relative variation of peak pulse power as a
function of junction temperature;
typical values
f = 1 MHz; T
Diode capacitance as a function of reverse
voltage; typical values
PESDxS2UQ series
5
50
amb
(1)
= 25 °C
10
RWM
RWM
RWM
100
= 12 V
= 15 V
= 24 V
(2)
15
150
(3)
© NXP B.V. 2010. All rights reserved.
20
001aaa193
T
001aaa728
V
j
(°C)
R
(V)
200
25
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