PESD12VS2UQ T/R NXP Semiconductors, PESD12VS2UQ T/R Datasheet - Page 5

• Manufacturer Part Number: PESD12VS2UQ T/R
• Description: TVS Diode Arrays DIODE ARRAY ESD TAPE-7
• Manufacturer: NXP Semiconductors
• Series: PESDxS2UQr

Specifications of PESD12VS2UQ T/R

• Product Category: TVS Diode Arrays
• Rohs: yes
• Polarity: Unidirectional
• Channels: 2 Channels
• Breakdown Voltage: 14.7 V
• Clamping Voltage: 35 V
• Operating Voltage: 12 V
• Peak Surge Current: 5 A
• Mounting Style: SMD/SMT
• Termination Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Maximum Operating Temperature: + 150 C
• Dimensions: 1.3 (Max) mm W x 1.7 (Max) mm L
• Package / Case: SOT-663
• Peak Pulse Power Dissipation: 150 W
• Factory Pack Quantity: 4000
• Part # Aliases: PESD12VS2UQ,115

NXP Semiconductors
PESDXS2UQ_SER_4
Product data sheet
Table 8.
T
[1]
[2]
Symbol
C
V
r
dif
j
CL
d
= 25
Non-repetitive current pulse 8/20 μs exponential decay waveform according to IEC 61000-4-5.
Measured across either pins 1 and 3 or pins 2 and 3.
°
C unless otherwise specified.
Parameter
diode capacitance
clamping voltage
differential resistance
Characteristics
PESD3V3S2UQ
PESD5V0S2UQ
PESD12VS2UQ
PESD15VS2UQ
PESD24VS2UQ
PESD3V3S2UQ
PESD5V0S2UQ
PESD12VS2UQ
PESD15VS2UQ
PESD24VS2UQ
PESD3V3S2UQ
PESD5V0S2UQ
PESD12VS2UQ
PESD15VS2UQ
PESD24VS2UQ
Rev. 04 — 26 January 2010
…continued
Conditions
f = 1 MHz; V
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
PP
PP
PP
PP
PP
PP
PP
PP
PP
PP
R
R
R
R
R
Double ESD protection diodes in SOT663 package
= 5 mA
= 5 mA
= 5 mA
= 1 mA
= 0.5 mA
= 1 A
= 15 A
= 1 A
= 15 A
= 1 A
= 5 A
= 1 A
= 5 A
= 1 A
= 3 A
R
= 0 V
PESDxS2UQ series
[1][2]
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
200
150
32
23
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
38
© NXP B.V. 2010. All rights reserved.
Max
275
215
100
70
50
8
20
9
20
19
35
23
40
36
70
40
15
15
225
300
pF
pF
pF
pF
Unit
pF
V
V
V
V
V
V
V
V
V
V
Ω
Ω
Ω
Ω
Ω
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