MT46V64M16TG-6T:A TR Micron Technology Inc, MT46V64M16TG-6T:A TR Datasheet - Page 29

• Manufacturer Part Number: MT46V64M16TG-6T:A TR
• Description: IC DDR SDRAM 1GBIT 6NS 66TSOP
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46V64M16TG-6T:A TR

• Format - Memory: RAM
• Memory Type: DDR SDRAM
• Memory Size: 1G (64M x 16)
• Speed: 6ns
• Interface: Parallel
• Voltage - Supply: 2.3 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 66-TSOP
• Organization: 64Mx16
• Density: 1Gb
• Address Bus: 16b
• Access Time (max): 700ps
• Maximum Clock Rate: 333MHz
• Operating Supply Voltage (typ): 2.5V
• Package Type: TSOP
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.3V
• Supply Current: 275mA
• Pin Count: 66
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Figure 11:
Figure 12:
PDF: 09005aef80a2f898/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 1Gb DDR: Rev. I, Core DDR: Rev. B 12/07 EN
Full Drive Pull-Down Characteristics
Full Drive Pull-Up Characteristics
39. Reduced output drive curves:
38d. The driver pull-up current variation within nominal limits of voltage and temper-
39b. The driver pull-down current variation, within nominal voltage and temperature
38e. The full ratio variation of MAX to MIN pull-up and pull-down current should be
39a. The full driver pull-down current variation from MIN to MAX process; tempera-
39c. The full driver pull-up current variation from MIN to MAX process; temperature
38f. The full ratio variation of the nominal pull-up to pull-down current should be
-100
-120
-140
-160
-180
-200
160
140
120
100
-2 0
-4 0
-6 0
-8 0
80
60
40
20
0
0
0.0
0. 0
ature is expected, but not guaranteed, to lie within the inner bounding lines of the
V-I curve of Figure 12 on page 29.
between 0.71 and 1.4 for drain-to-source voltages from 0.1V to 1.0V at the same
voltage and temperature.
unity ±10 percent for device drain-to-source voltages from 0.1V to 1.0V.
ture and voltage will lie within the outer bounding lines of the V-I curve of
Figure 13 on page 30.
limits, is expected, but not guaranteed, to lie within the inner bounding lines of
the V-I curve of Figure 13 on page 30.
and voltage will lie within the outer bounding lines of the V-I curve of Figure 14.
0.5
0 . 5
1.0
1. 0
V
DD
V
Q - V
OUT
29
(V)
OUT
(V)
1 . 5
1.5
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Electrical Specifications – DC and AC
2. 0
2.0
1Gb: x4, x8, x16 DDR SDRAM
2 . 5
2.5
©2003 Micron Technology, Inc. All rights reserved.