BZA868AL T/R NXP Semiconductors, BZA868AL T/R Datasheet - Page 4

• Manufacturer Part Number: BZA868AL T/R
• Description: TVS Diode Arrays DIODE ARRAY TAPE-7
• Manufacturer: NXP Semiconductors
• Series: BZA800ALr

Specifications of BZA868AL T/R

• Product Category: TVS Diode Arrays
• Rohs: yes
• Polarity: Unidirectional
• Channels: 4 Channels
• Operating Voltage: 7.14 V
• Peak Surge Current: 2 A
• Mounting Style: SMD/SMT
• Termination Style: SMD/SMT
• Dimensions: 1.35 (Max) mm W x 2.2 (Max) mm L
• Package / Case: SOT-353
• Peak Pulse Power Dissipation: 14 W
• Factory Pack Quantity: 3000
• Part # Aliases: BZA868AL,115

NXP Semiconductors
2002 Jan 11
handbook, halfpage
handbook, halfpage
Quadruple ESD transient voltage
suppressor
Fig.2
T
Fig.4
j
I ZSM
= 25 °C; f = 1 MHz.
(pF)
(A)
10
120
C d
80
40
10
−1
0
10
1
0
−2
Maximum non-repetitive peak reverse
current as a function of pulse time.
Diode capacitance as a function of reverse
voltage; typical values.
2
10
−1
BZA862AL
4
1
BZA868AL
BZA856AL
BZA862AL
6
BZA868AL
BZA856AL
t p (ms)
V R (V)
MLD792
MLD790
10
8
4
handbook, halfpage
handbook, halfpage
P
V
Fig.3
P ZSM
ZSM
ZSM
(mW)
(W)
P tot
400
300
200
100
10
10
= V
is the non-repetitive peak reverse voltage at I
0
1
10
2
0
−2
ZSM
Maximum non-repetitive peak reverse
power dissipation as a function of pulse
duration (square pulse).
× I
Fig.5 Power derating curve.
ZSM
.
10
50
−1
BZA800AL series
BZA862AL
100
1
BZA868AL
T amb (°C)
Product data sheet
BZA856AL
t p (ms)
ZSM
MLD793
MLD791
.
150
10