BZA868AL T/R NXP Semiconductors, BZA868AL T/R Datasheet - Page 3

• Manufacturer Part Number: BZA868AL T/R
• Description: TVS Diode Arrays DIODE ARRAY TAPE-7
• Manufacturer: NXP Semiconductors
• Series: BZA800ALr

Specifications of BZA868AL T/R

• Product Category: TVS Diode Arrays
• Rohs: yes
• Polarity: Unidirectional
• Channels: 4 Channels
• Operating Voltage: 7.14 V
• Peak Surge Current: 2 A
• Mounting Style: SMD/SMT
• Termination Style: SMD/SMT
• Dimensions: 1.35 (Max) mm W x 2.2 (Max) mm L
• Package / Case: SOT-353
• Peak Pulse Power Dissipation: 14 W
• Factory Pack Quantity: 3000
• Part # Aliases: BZA868AL,115

NXP Semiconductors
THERMAL CHARACTERISTICS
Note
1. Solder point of common anode (pin 2).
ELECTRICAL CHARACTERISTICS
T
2002 Jan 11
R
R
V
I
V
r
S
C
I
SYMBOL
SYMBOL
j
R
ZSM
dif
= 25 °C unless otherwise specified.
F
Z
Z
Quadruple ESD transient voltage
suppressor
th j-a
th j-s
d
thermal resistance from junction to ambient
thermal resistance from junction to solder point;
note 1
forward voltage
reverse current
working voltage
differential resistance
temperature coefficient
diode capacitance
non-repetitive peak reverse current
BZA856AL
BZA862AL
BZA868AL
BZA856AL
BZA862AL
BZA868AL
BZA856AL
BZA862AL
BZA868AL
BZA856AL
BZA862AL
BZA868AL
BZA856AL
BZA862AL
BZA868AL
BZA856AL
BZA862AL
BZA868AL
PARAMETER
PARAMETER
I
V
V
V
I
I
I
f = 1 MHz; V
t
F
Z
Z
Z
p
R
R
R
= 1 ms; T
= 200 mA
= 1 mA
= 1 mA
= 1 mA
= 3 V
= 4 V
= 4.3 V
3
CONDITIONS
all diodes loaded
one diode loaded
all diodes loaded
amb
R
= 0
= 25 °C
CONDITIONS
−
−
−
−
5.32
5.89
6.46
−
−
−
−
−
−
−
−
−
−
−
−
MIN.
BZA800AL series
−
−
−
−
5.6
6.2
6.8
−
−
−
0.3
1.6
2.2
−
−
−
−
−
−
TYP.
Product data sheet
1.3
1 000
500
100
5.88
6.51
7.14
400
300
200
−
−
−
125
105
90
2.2
2.1
2
VALUE
MAX.
410
200
185
V
nA
nA
nA
V
V
V
Ω
Ω
Ω
mV/K
mV/K
mV/K
pF
pF
pF
A
A
A
UNIT
UNIT
K/W
K/W
K/W