BZA862AVL T/R NXP Semiconductors, BZA862AVL T/R Datasheet - Page 5

• Manufacturer Part Number: BZA862AVL T/R
• Description: TVS Diode Arrays DIODE ARRAY TAPE-7
• Manufacturer: NXP Semiconductors
• Series: BZA800AVLr

Specifications of BZA862AVL T/R

• Product Category: TVS Diode Arrays
• Rohs: yes
• Polarity: Unidirectional
• Channels: 4 Channels
• Operating Voltage: 6.51 V
• Peak Surge Current: 0.85 A
• Mounting Style: SMD/SMT
• Termination Style: SMD/SMT
• Dimensions: 1.35 (Max) mm W x 2.2 (Max) mm L
• Package / Case: SOT-353
• Peak Pulse Power Dissipation: 6 W
• Factory Pack Quantity: 3000
• Part # Aliases: BZA862AVL,115

NXP Semiconductors
2003 Oct 20
handbook, halfpage
handbook, halfpage
Quadruple low capacitance ESD
suppressor
Fig.2
T
Fig.4
j
I ZSM
= 25 °C; f = 1 MHz.
(pF)
(A)
10
C d
10
26
22
18
14
10
−1
10
6
1
0
−2
Maximum non-repetitive peak reverse
current as a function of pulse time.
Diode capacitance as a function of reverse
voltage; typical values.
1
10
−1
BZA862AVL/BZA868AVL
2
BZA856AVL
BZA862AVL
BZA868AVL
3
1
BZA856AVL
t p (ms)
4
V R (V)
MLD997
MLD998
10
5
5
handbook, halfpage
handbook, halfpage
Fig.3
P ZSM
(mW)
P tot
(W)
400
300
200
100
10
10
0
1
10
2
0
−2
Maximum non-repetitive peak reverse
power dissipation as a function of pulse
duration (square pulse).
Fig.5 Power derating curve.
10
50
−1
BZA856AVL
BZA868AVL
BZA800AVL series
BZA862AVL
100
1
T amb (°C)
Product data sheet
t p (ms)
MLD793
MLD999
150
10