BZA862AVL T/R NXP Semiconductors, BZA862AVL T/R Datasheet - Page 3

• Manufacturer Part Number: BZA862AVL T/R
• Description: TVS Diode Arrays DIODE ARRAY TAPE-7
• Manufacturer: NXP Semiconductors
• Series: BZA800AVLr

Specifications of BZA862AVL T/R

• Product Category: TVS Diode Arrays
• Rohs: yes
• Polarity: Unidirectional
• Channels: 4 Channels
• Operating Voltage: 6.51 V
• Peak Surge Current: 0.85 A
• Mounting Style: SMD/SMT
• Termination Style: SMD/SMT
• Dimensions: 1.35 (Max) mm W x 2.2 (Max) mm L
• Package / Case: SOT-353
• Peak Pulse Power Dissipation: 6 W
• Factory Pack Quantity: 3000
• Part # Aliases: BZA862AVL,115

NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. DC working current limited by P
2. Device mounted on standard printed-circuit board.
ESD STANDARDS COMPLIANCE
THERMAL CHARACTERISTICS
Note
1. Solder point of common anode (pin 2).
2003 Oct 20
Per diode
I
I
I
P
P
T
T
ESD
IEC 61000-4-2, level 4 (ESD)
HBM MIL-Std 883, class 3
R
R
Z
F
FSM
SYMBOL
SYMBOL
stg
j
tot
ZSM
Quadruple low capacitance ESD
suppressor
th j-a
th j-s
working current
continuous forward current
non-repetitive peak forward current
total power dissipation
non repetitive peak reverse power
dissipation
storage temperature
junction temperature
electrostatic discharge
thermal resistance from junction to
ambient
thermal resistance from junction to
solder point; note 1
STANDARD
PARAMETER
PARAMETER
tot(max)
.
T
T
t
T
square pulse; t
IEC 61000-4-2 (contact discharge) 15
HBM MIL-Std 883
all diodes loaded
one diode loaded
all diodes loaded
>15 kV (air); >8 kV (contact discharge)
>4 kV
p
amb
amb
amb
= 1 ms; square pulse
= 25 °C
= 25 °C
= 25 °C; note 2; see Fig.5
3
CONDITIONS
CONDITIONS
p
= 1 ms
CONDITIONS
BZA800AVL series
−
−
−
−
−
−65
−
10
MIN.
VALUE
410
200
185
Product data sheet
note 1
200
3.5
300
6
+150
150
−
−
MAX.
UNIT
K/W
K/W
K/W
mA
mA
A
mW
W
°C
°C
kV
kV
UNIT