BZA100 /T3 NXP Semiconductors, BZA100 /T3 Datasheet - Page 4

• Manufacturer Part Number: BZA100 /T3
• Description: TVS Diode Arrays DIODE ARRAY TAPE-13
• Manufacturer: NXP Semiconductors
• Series: BZA100r

Specifications of BZA100 /T3

• Product Category: TVS Diode Arrays
• Rohs: yes
• Polarity: Unidirectional
• Channels: 18 Channels
• Clamping Voltage: 11 V
• Operating Voltage: 7.2 V
• Peak Surge Current: 2.5 A
• Mounting Style: SMD/SMT
• Termination Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Maximum Operating Temperature: + 150 C
• Dimensions: 7.6(Max) mm W x 13(Max) mm L
• Package / Case: SOT-163
• Peak Pulse Power Dissipation: 27.5 W
• Factory Pack Quantity: 2000
• Part # Aliases: BZA100,118

NXP Semiconductors
GRAPHICAL DATA
1997 Dec 02
handbook, halfpage
handbook, halfpage
18-fold ESD transient voltage suppressor
P
V
Fig.4
ZSM
ZSM
P ZSM
(W)
I ZSM
10
(A)
Fig.2
10
= V
is the non-repetitive peak reverse voltage at I
10
10
−1
10
10
1
1
2
ZSM
−1
−1
Maximum non-repetitive peak reverse power
dissipation as a function of pulse duration
(square pulse).
× I
Maximum non-repetitive peak reverse
current as a function of pulse time.
ZSM
.
1
1
10
10
10
10
2
2
ZSM
t p (ms)
t p (ms)
MBG394
MBG395
.
10
10
3
3
4
handbook, halfpage
handbook, halfpage
T
j
All diodes loaded.
= 25 °C; f = 1 MHz.
Fig.5
P tot
(W)
(pF)
C d
100
2.4
1.6
0.8
80
60
40
0
0
0
Diode capacitance as a function of reverse
voltage; typical values.
Fig.3 Power derating curve.
50
2
100
4
Product data sheet
V R (V)
T s (
o
BZA100
MBG393
C)
MBG392
150
6