BZA100 /T3 NXP Semiconductors, BZA100 /T3 Datasheet - Page 3

• Manufacturer Part Number: BZA100 /T3
• Description: TVS Diode Arrays DIODE ARRAY TAPE-13
• Manufacturer: NXP Semiconductors
• Series: BZA100r

Specifications of BZA100 /T3

• Product Category: TVS Diode Arrays
• Rohs: yes
• Polarity: Unidirectional
• Channels: 18 Channels
• Clamping Voltage: 11 V
• Operating Voltage: 7.2 V
• Peak Surge Current: 2.5 A
• Mounting Style: SMD/SMT
• Termination Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Maximum Operating Temperature: + 150 C
• Dimensions: 7.6(Max) mm W x 13(Max) mm L
• Package / Case: SOT-163
• Peak Pulse Power Dissipation: 27.5 W
• Factory Pack Quantity: 2000
• Part # Aliases: BZA100,118

NXP Semiconductors
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
T
1997 Dec 02
R
R
Per diode
V
V
V
I
r
S
C
SYMBOL
SYMBOL
j
R
dif
= 25 °C unless otherwise specified.
Z
F
ZSM
Z
18-fold ESD transient voltage suppressor
th j-s
th j-a
d
thermal resistance from junction to soldering point
thermal resistance from junction to ambient
working voltage
forward voltage
non-repetitive peak reverse voltage
reverse current
differential resistance
temperature coefficient of
working voltage
diode capacitance
PARAMETER
PARAMETER
I
I
t
V
I
I
I
see Fig.5
Z
F
p
Z
Z
Z
R
= 1 ms; I
V
V
= 200 mA
= 1 mA
= 5 mA
= 5mA
= 5 mA
= 5.25 V
R
R
= 0; f = 1 MHz
= 5.25 V; f = 1 MHz
CONDITIONS
3
ZSM
= 2.5 A
one or more diodes loaded
CONDITIONS
6.4
−
−
−
−
−
−
−
−
MIN.
6.8
−
−
−
−
−
3
−
−
TYP.
7.2
1.3
11
2
40
8
−
120
60
VALUE
Product data sheet
MAX.
56.5
100
BZA100
V
V
V
µA
Ω
Ω
mV/K
pF
pF
UNIT
UNIT
K/W
K/W