IS42S32800B-7TI ISSI, Integrated Silicon Solution Inc, IS42S32800B-7TI Datasheet - Page 52
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IS42S32800B-7TI
Manufacturer Part Number
IS42S32800B-7TI
Description
IC SDRAM 256MBIT 143MHZ 86TSOP
Manufacturer
ISSI, Integrated Silicon Solution Inc
Datasheet
1.IS42S32800B-7BL.pdf
(62 pages)
Specifications of IS42S32800B-7TI
Format - Memory
RAM
Memory Type
SDRAM
Memory Size
256M (8Mx32)
Speed
143MHz
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
86-TSOPII
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
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IS42S32800B
52
Figure 18.3.Full Page Read Cycle (Burst Length=Full Page,CAS#Latency=3)
BS0,1
CAS#
A0-A9
DQM
RAS#
WE#
CKE
CLK
CS#
A10
DQ Hi-Z
High
Command
Activate
Bank A
RAx
RAx
T0 T 1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
t
CK3
Command
Bank A
Read
CAx
Command
Activate
Bank B
RBx
RBx
Ax
The burst counter wraps
from the highest order
page address back to zero
during this time interval
Ax+1
Ax+2
Ax-2 Ax-1
Command
Bank B
Read
CBx
Ax
Full Page burst operation does not
terminate when the burst length is
satisfied; the burst counter
increments and continues
bursting beginning with the
starting address.
Ax+1
Bx
Bx+1
Bx+2 Bx+3 Bx+4 Bx+5
Integrated Silicon Solution, Inc.
Burst Stop
Command
Precharge
Command
Bank B
t
RP
Command
Activate
Bank B
RBy
RBy
07/21/09
Rev. F
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