IS42S32800B-7TI ISSI, Integrated Silicon Solution Inc, IS42S32800B-7TI Datasheet - Page 10
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IS42S32800B-7TI
Manufacturer Part Number
IS42S32800B-7TI
Description
IC SDRAM 256MBIT 143MHZ 86TSOP
Manufacturer
ISSI, Integrated Silicon Solution Inc
Datasheet
1.IS42S32800B-7BL.pdf
(62 pages)
Specifications of IS42S32800B-7TI
Format - Memory
RAM
Memory Type
SDRAM
Memory Size
256M (8Mx32)
Speed
143MHz
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
86-TSOPII
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
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IS42S32800B
10
CLK
D Q M
COMMAND
DQ’s
A read burst without the auto precharge function may be interrupted by a BankPrecharge/
PrechargeAll command to the same bank.The following figure shows the optimum time that
BankPrecharge/PrechargeAll command is issued in different CAS#latency.
CLK
DQM
COMMAND
CAS# latency=2
t CK2 , DQ’s
CLK
DQM
COMMAND
CAS# latency=2
: "H" or "L"
tCK2, DQs
: "H" or "L"
: "H" or "L"
tCK2, DQs
NOP
T0
T0
NOP
Read to Write Interval (Burst Length = 4,CAS#Latency =3)
Read to Write Interval (Burst Length = 4,CAS#Latency =2)
T0
NOP
Read to Write Interval (Burst Length = 4,CAS#Latency =2)
READ A
T1
T1
NOP
T1
NOP
READ A
T2
NOP
ACTIVAT E
T2
BANKA
T2
T3
T3
NOP
NOP
T3
NOP
DOUT A
NOP
T4
T4
READ A
NOP
T4
1 Clk Interval
the Write Command
Must be Hi-Z before
WRITEB
NOP
T5
T5
DIN B 0
WRITEA
T5
DIN A 0
WRITE B
DIN B 1
T6
DINB 0
T6
NOP
DIN A 1
NOP
T6
Integrated Silicon Solution, Inc.
NOP
T7
T7
DINB 1
NOP
DIN B 2
T7
NOP
DIN A 2
NOP
NOP
T8
DINB 2
T8
DIN B 3
NOP
T8
DIN A 3
07/21/09
Rev. F
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